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Article: Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

TitleStep bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
Authors
Xie, MHCheung, SHZheng, LXNg, YFWu, HOhtani, NTong, SY
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 2000, v. 61 n. 15, p. 9983-9985 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.61.9983
AbstractStep bunching of vicinal GaN(0001) surface during epitaxial growth is observed by scanning tunneling microscopy. Large step stiffness and repulsive step-step interaction are suggested based on step morphology observations. The size of the bunch changes with time, depending on the direction in which the substrate is heated by a direct current. This observation provides evidence for the electromigration effect causing the step bunching, and from the field dependence we infer that adatoms, which are likely N, have effective positive charges. ©2000 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43294
ISSN
0163-1829
ISI Accession Number ID
WOS:000086606200036
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorNg, YFen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorOhtani, Nen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-03-23T04:43:02Z-
dc.date.available2007-03-23T04:43:02Z-
dc.date.issued2000en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 2000, v. 61 n. 15, p. 9983-9985-
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43294-
dc.description.abstractStep bunching of vicinal GaN(0001) surface during epitaxial growth is observed by scanning tunneling microscopy. Large step stiffness and repulsive step-step interaction are suggested based on step morphology observations. The size of the bunch changes with time, depending on the direction in which the substrate is heated by a direct current. This observation provides evidence for the electromigration effect causing the step bunching, and from the field dependence we infer that adatoms, which are likely N, have effective positive charges. ©2000 The American Physical Society.en_HK
dc.format.extent130314 bytes-
dc.format.extent26624 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 2000 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.61.9983-
dc.subjectPhysicsen_HK
dc.titleStep bunching of vicinal GaN(0001) surfaces during molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=61&issue=15&spage=9983&epage=9985&date=2000&atitle=Step+bunching+of+vicinal+GaN(0001)+surfaces+during+molecular+beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.61.9983en_HK
dc.identifier.scopuseid_2-s2.0-0001085398en_HK
dc.identifier.hkuros50227-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001085398&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume61en_HK
dc.identifier.issue15en_HK
dc.identifier.spage9983en_HK
dc.identifier.epage9985en_HK
dc.identifier.isiWOS:000086606200036-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridOhtani, N=7103392778en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0163-1829-

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