File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Initial stage of GaN growth and its implication to defect formation in films

TitleInitial stage of GaN growth and its implication to defect formation in films
Authors
Cheung, SHZheng, LXXie, MHTong, SYOhtani, N
KeywordsPhysics
Issue Date2001
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 2001, v. 64 n. 3, article no. 033304 , p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.64.033304
AbstractIn situ scanning tunneling microscopy (STM) observations of initial growth processes of GaN by molecularbeam epitaxy reveal important differences between growth on vicinal versus flat SiC(0001) substrates. Based on stop-growth STM studies, we explain why there are orders of magnitude reductions in the density of threading screw dislocations in the vicinal films. It is shown that on vicinal surfaces, three-dimensional (3D) islands develop into a characteristic shape. The islands coalesce much sooner than on flat surfaces. Consequently, fewer defects are created at their boundaries.
Persistent Identifierhttp://hdl.handle.net/10722/43347
ISSN
0163-1829
ISI Accession Number ID
WOS:000169989800010
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorOhtani, Nen_HK
dc.date.accessioned2007-03-23T04:44:01Z-
dc.date.available2007-03-23T04:44:01Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 2001, v. 64 n. 3, article no. 033304 , p. 1-4-
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43347-
dc.description.abstractIn situ scanning tunneling microscopy (STM) observations of initial growth processes of GaN by molecularbeam epitaxy reveal important differences between growth on vicinal versus flat SiC(0001) substrates. Based on stop-growth STM studies, we explain why there are orders of magnitude reductions in the density of threading screw dislocations in the vicinal films. It is shown that on vicinal surfaces, three-dimensional (3D) islands develop into a characteristic shape. The islands coalesce much sooner than on flat surfaces. Consequently, fewer defects are created at their boundaries.en_HK
dc.format.extent524914 bytes-
dc.format.extent26624 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 2001 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.64.033304-
dc.subjectPhysicsen_HK
dc.titleInitial stage of GaN growth and its implication to defect formation in filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=64&issue=3&spage=033304:1&epage=4&date=2001&atitle=Initial+stage+of+GaN+growth+and+its+implication+to+defect+formation+in+filmsen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.64.033304en_HK
dc.identifier.scopuseid_2-s2.0-0009502475en_HK
dc.identifier.hkuros65629-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0009502475&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume64en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 033304, p. 1-
dc.identifier.epagearticle no. 033304, p. 4-
dc.identifier.isiWOS:000169989800010-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridOhtani, N=7103392778en_HK
dc.identifier.citeulike1543548-
dc.identifier.issnl0163-1829-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats