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Article: Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy

TitleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
Authors
Cao, YGXie, MHLiu, YXu, SHNg, YFWu, HSTong, SY
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 2003, v. 68 n. 16, article no. 161304 , p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.68.161304
AbstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.
Persistent Identifierhttp://hdl.handle.net/10722/43404
ISSN
0163-1829
ISI Accession Number ID
WOS:000186571800007
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCao, YGen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorXu, SHen_HK
dc.contributor.authorNg, YFen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-03-23T04:45:04Z-
dc.date.available2007-03-23T04:45:04Z-
dc.date.issued2003en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 2003, v. 68 n. 16, article no. 161304 , p. 1-4-
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43404-
dc.description.abstractThe scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (∼10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i = 1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE.en_HK
dc.format.extent388752 bytes-
dc.format.extent26624 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 2003 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.68.161304-
dc.subjectPhysicsen_HK
dc.titleScaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=68&issue=16&spage=161304:1&epage=4&date=2003&atitle=Scaling+of+three-dimensional+InN+islands+grown+on+GaN(0001)+by+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.68.161304en_HK
dc.identifier.scopuseid_2-s2.0-10644253563en_HK
dc.identifier.hkuros85046-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10644253563&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume68en_HK
dc.identifier.issue16en_HK
dc.identifier.spagearticle no. 161304, p. 1-
dc.identifier.epagearticle no. 161304, p. 4-
dc.identifier.isiWOS:000186571800007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCao, YG=7404524244en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridLiu, Y=26643293600en_HK
dc.identifier.scopusauthoridXu, SH=36832008600en_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0163-1829-

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