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Article: Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film

TitleStatic dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 6, article no. 063103 How to Cite?
AbstractThe static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a Si O2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si -based memory devices. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45254
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDong, ZLen_HK
dc.date.accessioned2007-10-30T06:21:06Z-
dc.date.available2007-10-30T06:21:06Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 6, article no. 063103-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45254-
dc.description.abstractThe static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a Si O2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si -based memory devices. © 2006 American Institute of Physics.en_HK
dc.format.extent135697 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 88 n. 6, article no. 063103 and may be found at https://doi.org/10.1063/1.2172009-
dc.subjectPhysics Engineeringen_HK
dc.titleStatic dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=6&spage=063103:1&epage=3&date=2006&atitle=Static+dielectric+constant+of+isolated+silicon+nanocrystals+embedded+in+a+SIO2+thin+filmen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2172009en_HK
dc.identifier.scopuseid_2-s2.0-32444451788en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-32444451788&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue6en_HK
dc.identifier.spagearticle no. 063103-
dc.identifier.epagearticle no. 063103-
dc.identifier.isiWOS:000235252800087-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDong, ZL=17345797900en_HK
dc.identifier.issnl0003-6951-

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