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Article: Deep energy levels in RuO2/4H–SiC Schottky barrier structures

TitleDeep energy levels in RuO2/4H–SiC Schottky barrier structures
Authors
Stuchlikova, LBuc, DHarmatha, LHelmersson, UChang, WHBello, I
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 15, article no. 153509, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2195775
AbstractRuO2/4H–SiC Schottky diode structures based on n-type 4H–SiC (7×1017 cm–3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 µ cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85 eV with reference to the conduction band.
Persistent Identifierhttp://hdl.handle.net/10722/45261
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000236796400100

 

DC FieldValueLanguage
dc.contributor.authorStuchlikova, Len_HK
dc.contributor.authorBuc, Den_HK
dc.contributor.authorHarmatha, Len_HK
dc.contributor.authorHelmersson, Uen_HK
dc.contributor.authorChang, WHen_HK
dc.contributor.authorBello, Ien_HK
dc.date.accessioned2007-10-30T06:21:14Z-
dc.date.available2007-10-30T06:21:14Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 15, article no. 153509, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45261-
dc.description.abstractRuO2/4H–SiC Schottky diode structures based on n-type 4H–SiC (7×1017 cm–3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 µ cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with thermal activation energies of 0.56 and 0.85 eV with reference to the conduction band.en_HK
dc.format.extent83589 bytes-
dc.format.extent1777 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 88 n. 15, article no. 153509, p. 1-3 and may be found at https://doi.org/10.1063/1.2195775-
dc.subjectPhysics Engineeringen_HK
dc.titleDeep energy levels in RuO2/4H–SiC Schottky barrier structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=15&spage=153509:1&epage=3&date=2006&atitle=Deep+energy+levels+in+RuO2/4H–SiC+Schottky+barrier+structuresen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2195775en_HK
dc.identifier.scopuseid_2-s2.0-84988274684-
dc.identifier.volume88-
dc.identifier.issue15-
dc.identifier.spagearticle no. 153509, p. 1-
dc.identifier.epagearticle no. 153509, p. 3-
dc.identifier.isiWOS:000236796400100-
dc.identifier.issnl0003-6951-

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