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Article: Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

TitleCharging effect on current conduction in aluminum nitride thin films containing Al nanocrystals
Authors
Liu, YChen, TPLau, HWWong, JIDing, LZhang, SFung, S
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 12, article no. 123101 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2354418
AbstractThe presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the ncAl/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45265
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000240680300100
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLau, HWen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:21:19Z-
dc.date.available2007-10-30T06:21:19Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 12, article no. 123101-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45265-
dc.description.abstractThe presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the ncAl/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping. © 2006 American Institute of Physics.en_HK
dc.format.extent253144 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 89 n. 12, article no. 123101 and may be found at https://doi.org/10.1063/1.2354418-
dc.subjectPhysics Engineeringen_HK
dc.titleCharging effect on current conduction in aluminum nitride thin films containing Al nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=12&spage=123101:1&epage=3&date=2006&atitle=Charging+effect+on+current+conduction+in+aluminum+nitride+thin+films+containing+Al+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2354418en_HK
dc.identifier.scopuseid_2-s2.0-33748985495en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33748985495&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue12en_HK
dc.identifier.spagearticle no. 123101-
dc.identifier.epagearticle no. 123101-
dc.identifier.isiWOS:000240680300100-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLau, HW=8597299400en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0003-6951-

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