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Article: Spontaneous emission mechanisms of GaInAsNGaAs quantum dot systems

TitleSpontaneous emission mechanisms of GaInAsNGaAs quantum dot systems
Authors
Wei, ZFXu, SJLi, Q
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2006, v. 100 n. 12, article no. 124311 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2401051
AbstractVariable-temperature photoluminescence (PL) spectra taken on two different kinds of GaInAsN quantum dots (QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PL spectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45283
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000243157900088
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Qen_HK
dc.date.accessioned2007-10-30T06:21:41Z-
dc.date.available2007-10-30T06:21:41Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal of Applied Physics, 2006, v. 100 n. 12, article no. 124311-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45283-
dc.description.abstractVariable-temperature photoluminescence (PL) spectra taken on two different kinds of GaInAsN quantum dots (QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PL spectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices. © 2006 American Institute of Physics.en_HK
dc.format.extent617388 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 100 n. 12, article no. 124311 and may be found at https://doi.org/10.1063/1.2401051-
dc.subjectPhysics Engineeringen_HK
dc.titleSpontaneous emission mechanisms of GaInAsNGaAs quantum dot systemsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=100&issue=12&spage=124311:1&epage=6&date=2006&atitle=Spontaneous+emission+mechanisms+of+GaInAsN/GaAs+quantum+dot+systemsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2401051en_HK
dc.identifier.scopuseid_2-s2.0-33846051819en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846051819&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue12en_HK
dc.identifier.spagearticle no. 124311-
dc.identifier.epagearticle no. 124311-
dc.identifier.isiWOS:000243157900088-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.issnl0021-8979-

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