File Download
Supplementary
-
Citations:
- Appears in Collections:
Conference Paper: The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center?
Title | The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center? |
---|---|
Authors | |
Keywords | Physics engineering chemistry |
Issue Date | 1998 |
Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
Citation | The 1998 Symposium of the Materials Research Society Symposium, San Francisco, CA., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 481-486 How to Cite? |
Abstract | Based on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs (LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs. |
Description | Symposium Theme: Defect and impurity engineered semiconductors II |
Persistent Identifier | http://hdl.handle.net/10722/47030 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Reddy, CV | en_HK |
dc.contributor.author | Fung, SHY | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2007-10-30T07:04:50Z | - |
dc.date.available | 2007-10-30T07:04:50Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | The 1998 Symposium of the Materials Research Society Symposium, San Francisco, CA., 13-17 April 1998. In Conference Proceedings, 1998, v. 510, p. 481-486 | en_HK |
dc.identifier.issn | 0272-9172 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47030 | - |
dc.description | Symposium Theme: Defect and impurity engineered semiconductors II | - |
dc.description.abstract | Based on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs (LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs. | en_HK |
dc.format.extent | 314845 bytes | - |
dc.format.extent | 13983 bytes | - |
dc.format.extent | 5932 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
dc.relation.ispartof | Materials Research Society Symposium Proceedings | - |
dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
dc.subject | Physics engineering chemistry | en_HK |
dc.title | The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center? | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=510&spage=481&epage=486&date=1998&atitle=The+transformations+of+the+EL6+deep+level+defect+in+n-GaAs:+is+EL6+a+DX-like+center? | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.hkuros | 38879 | - |
dc.identifier.issnl | 0272-9172 | - |