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Conference Paper: Study of microvoids in high-rate a-Si:H using positron annihilation
Title | Study of microvoids in high-rate a-Si:H using positron annihilation |
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Authors | |
Keywords | Physics engineering chemistry |
Issue Date | 1997 |
Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
Citation | The 1997 Materials Research Society Symposium, San Francisco, CA., 31 March-4 April 1997. In Conference Proceedings, 1997, v. 467, p. 525-530 How to Cite? |
Abstract | In this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature. |
Description | Theme: Amorphous and microcrystalline silicon technology |
Persistent Identifier | http://hdl.handle.net/10722/47031 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
DC Field | Value | Language |
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dc.contributor.author | Zou, X | en_HK |
dc.contributor.author | Webb, DP | en_HK |
dc.contributor.author | Lin, SH | en_HK |
dc.contributor.author | Lam, YW | en_HK |
dc.contributor.author | Chan, YC | en_HK |
dc.contributor.author | Hu, YF | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, SHY | en_HK |
dc.date.accessioned | 2007-10-30T07:04:51Z | - |
dc.date.available | 2007-10-30T07:04:51Z | - |
dc.date.issued | 1997 | en_HK |
dc.identifier.citation | The 1997 Materials Research Society Symposium, San Francisco, CA., 31 March-4 April 1997. In Conference Proceedings, 1997, v. 467, p. 525-530 | en_HK |
dc.identifier.issn | 0272-9172 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47031 | - |
dc.description | Theme: Amorphous and microcrystalline silicon technology | - |
dc.description.abstract | In this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si;H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature. | en_HK |
dc.format.extent | 287963 bytes | - |
dc.format.extent | 13983 bytes | - |
dc.format.extent | 5932 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
dc.relation.ispartof | Materials Research Society Symposium Proceedings | - |
dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
dc.subject | Physics engineering chemistry | en_HK |
dc.title | Study of microvoids in high-rate a-Si:H using positron annihilation | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=467&spage=525&epage=530&date=1997&atitle=Study+of+microvoids+in+high-rate+a-Si:H+using+positron+annihilation | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.hkuros | 39167 | - |
dc.identifier.issnl | 0272-9172 | - |