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Conference Paper: Structural and electrical properties of beryllium implanted silicon carbide
Title | Structural and electrical properties of beryllium implanted silicon carbide |
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Authors | |
Keywords | Physics engineering chemistry |
Issue Date | 1999 |
Publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html |
Citation | Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications-1999, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 5-8 April 1999, v. 572, p. 117-122 How to Cite? |
Abstract | Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy. |
Persistent Identifier | http://hdl.handle.net/10722/47036 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
References |
DC Field | Value | Language |
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dc.contributor.author | Henkel, T | en_HK |
dc.contributor.author | Tanaka, Y | en_HK |
dc.contributor.author | Kobayashi, N | en_HK |
dc.contributor.author | Tangue, H | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2007-10-30T07:04:59Z | - |
dc.date.available | 2007-10-30T07:04:59Z | - |
dc.date.issued | 1999 | en_HK |
dc.identifier.citation | Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications-1999, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 5-8 April 1999, v. 572, p. 117-122 | en_HK |
dc.identifier.issn | 0272-9172 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47036 | - |
dc.description.abstract | Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy. | en_HK |
dc.format.extent | 282623 bytes | - |
dc.format.extent | 13983 bytes | - |
dc.format.extent | 5932 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html | en_HK |
dc.relation.ispartof | Materials Research Society Symposium - Proceedings | en_HK |
dc.rights | Materials Research Society Symposium Proceedings. Copyright © Materials Research Society. | en_HK |
dc.subject | Physics engineering chemistry | en_HK |
dc.title | Structural and electrical properties of beryllium implanted silicon carbide | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=572&spage=117&epage=122&date=1999&atitle=Structural+and+electrical+properties+of+beryllium+implanted+silicon+carbide | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.scopus | eid_2-s2.0-0033322576 | en_HK |
dc.identifier.hkuros | 48424 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0033322576&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 572 | en_HK |
dc.identifier.spage | 117 | en_HK |
dc.identifier.epage | 122 | en_HK |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Henkel, T=7007164479 | en_HK |
dc.identifier.scopusauthorid | Tanaka, Y=7405314172 | en_HK |
dc.identifier.scopusauthorid | Kobayashi, N=7404311470 | en_HK |
dc.identifier.scopusauthorid | Tangue, H=7006255463 | en_HK |
dc.identifier.scopusauthorid | Gong, M=9273057400 | en_HK |
dc.identifier.scopusauthorid | Chen, XD=26642908200 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0272-9172 | - |