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Conference Paper: Microstructure of the deep level defect E1/E2 in 6H silicon carbide
Title | Microstructure of the deep level defect E1/E2 in 6H silicon carbide |
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Authors | |
Keywords | Physics |
Issue Date | 2004 |
Publisher | American Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfm |
Citation | The 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 904-905, abstract no. P10.005 How to Cite? |
Abstract | Deep level transient spectroscopy (DLTS) was used to study the deep level defects in low energy electron irradiated 6H-SiC materials. The electron energy was varied as 0.2MeV, 0.3MeV, 0.5MeV and 1.7MeV in order to study the threshold electron energy required to create the various deep levels. No deep level was observed after the 0.2MeV irradiation. Deep levels E1/E2 (EC-0.36/0.44eV) and Ei (EC-0.50eV) were observed after the 0.3MeV irradiation. By considering the minimum energy required to displace the carbon or the silicon atoms in the SiC lattice, it is concluded the creation of the E1/E2 and the Ei defects by the electron irradiation process involves the displacement of the carbon atom in the lattice. Our result suggests the deep levels E1/E2 and Ei should have a microstructure containing a carbon vacancy or a carbon interstitial. |
Description | Session P10 - Focus Session: Wide-Band-Gap Semiconductors V |
Persistent Identifier | http://hdl.handle.net/10722/47044 |
ISSN |
DC Field | Value | Language |
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dc.contributor.author | Ling, FCC | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.date.accessioned | 2007-10-30T07:05:10Z | - |
dc.date.available | 2007-10-30T07:05:10Z | - |
dc.date.issued | 2004 | en_HK |
dc.identifier.citation | The 2004 March Meeting of the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 904-905, abstract no. P10.005 | en_HK |
dc.identifier.issn | 0003-0503 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47044 | - |
dc.description | Session P10 - Focus Session: Wide-Band-Gap Semiconductors V | - |
dc.description.abstract | Deep level transient spectroscopy (DLTS) was used to study the deep level defects in low energy electron irradiated 6H-SiC materials. The electron energy was varied as 0.2MeV, 0.3MeV, 0.5MeV and 1.7MeV in order to study the threshold electron energy required to create the various deep levels. No deep level was observed after the 0.2MeV irradiation. Deep levels E1/E2 (EC-0.36/0.44eV) and Ei (EC-0.50eV) were observed after the 0.3MeV irradiation. By considering the minimum energy required to displace the carbon or the silicon atoms in the SiC lattice, it is concluded the creation of the E1/E2 and the Ei defects by the electron irradiation process involves the displacement of the carbon atom in the lattice. Our result suggests the deep levels E1/E2 and Ei should have a microstructure containing a carbon vacancy or a carbon interstitial. | - |
dc.format.extent | 925177 bytes | - |
dc.format.extent | 1036577 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfm | en_HK |
dc.relation.ispartof | Bulletin of the American Physical Society | - |
dc.rights | Copyright 2004 by The American Physical Society. | en_HK |
dc.subject | Physics | en_HK |
dc.title | Microstructure of the deep level defect E1/E2 in 6H silicon carbide | en_HK |
dc.type | Conference_Paper | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.hkuros | 85838 | - |
dc.identifier.issnl | 0003-0503 | - |