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Conference Paper: Metal-organic pentacene derivative with well ordered morphology for the application of low voltage organic thin film transistors

TitleMetal-organic pentacene derivative with well ordered morphology for the application of low voltage organic thin film transistors
Authors
Issue Date2005
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
S P I E Conference on Optics & Photonics 2005, San Diego, CA, USA, 31 July 2005. In Proceedings of SPIE, 2005, v. 5490, p. 59401L-1 - 59401L-7 How to Cite?
AbstractMetal organic pentacene based low voltage organic thin film transistors with field effect mobility as large as 0.8 cm2/V-1.s -1 and on/off current ratio larger than 106 have been fabricated. Thin films deposited by evaporation at different deposition rate has different morphology which leads to a difference in transistor characteristics. The films with a deposition rate of 2A/sec has better morphology and also the transistor behavior. AFM (atomic force microscope) and STM (scanning tunneling microscope) were used to understand the morphology and ordering of the molecules on the silicon surface which helps the transistor to operate at low voltages. The results presented here show a strong correlation between molecular ordering and the need of well-ordered films for the performance of organic thin film transistors (OTFT's).
Persistent Identifierhttp://hdl.handle.net/10722/54008
ISSN
2023 SCImago Journal Rankings: 0.152
References

 

DC FieldValueLanguage
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorZhi, YGen_HK
dc.contributor.authorYu, SCen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2009-04-03T07:34:18Z-
dc.date.available2009-04-03T07:34:18Z-
dc.date.issued2005en_HK
dc.identifier.citationS P I E Conference on Optics & Photonics 2005, San Diego, CA, USA, 31 July 2005. In Proceedings of SPIE, 2005, v. 5490, p. 59401L-1 - 59401L-7-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/54008-
dc.description.abstractMetal organic pentacene based low voltage organic thin film transistors with field effect mobility as large as 0.8 cm2/V-1.s -1 and on/off current ratio larger than 106 have been fabricated. Thin films deposited by evaporation at different deposition rate has different morphology which leads to a difference in transistor characteristics. The films with a deposition rate of 2A/sec has better morphology and also the transistor behavior. AFM (atomic force microscope) and STM (scanning tunneling microscope) were used to understand the morphology and ordering of the molecules on the silicon surface which helps the transistor to operate at low voltages. The results presented here show a strong correlation between molecular ordering and the need of well-ordered films for the performance of organic thin film transistors (OTFT's).en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2005 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.629622-
dc.titleMetal-organic pentacene derivative with well ordered morphology for the application of low voltage organic thin film transistorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=5490&spage=59401L&epage=1 &date=2005&atitle=Metal-organic+pentacene+derivative+with+well+ordered+morphology+for+the+application+of+low+voltage+organic+thin+film+transistorsen_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.629622en_HK
dc.identifier.scopuseid_2-s2.0-31744438652en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31744438652&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5940en_HK
dc.identifier.spage1en_HK
dc.identifier.epage7en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridZhi, YG=7004142893en_HK
dc.identifier.scopusauthoridYu, SC=7405730262en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.issnl0277-786X-

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