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Article: Nanocomposite field effect transistors based on zinc oxide/polymer blends

TitleNanocomposite field effect transistors based on zinc oxide/polymer blends
Authors
Xu, ZXRoy, VALStallinga, PMuccini, MToffanin, SXiang, HFChe, CM
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 22, article no. 223509 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2740478
AbstractThe authors have examined the field effect behavior of nanocomposite field effect transistors containing ZnO (zinc oxide) tetrapods or nanocrystals dispersed in a polymer matrix of poly[2-methoxy,5-(2-ethylhexyloxy)-1,4- phenylenevinylene] (MEH-PPV). The electrical characteristics of ZnO tetrapods/MEH-PPV composite devices exhibit an increase in hole mobility up to three orders of magnitude higher than the polymer MEH-PPV device. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57311
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000246909900087
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, ZXen_HK
dc.contributor.authorRoy, VALen_HK
dc.contributor.authorStallinga, Pen_HK
dc.contributor.authorMuccini, Men_HK
dc.contributor.authorToffanin, Sen_HK
dc.contributor.authorXiang, HFen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-04-12T01:32:49Z-
dc.date.available2010-04-12T01:32:49Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 22, article no. 223509-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57311-
dc.description.abstractThe authors have examined the field effect behavior of nanocomposite field effect transistors containing ZnO (zinc oxide) tetrapods or nanocrystals dispersed in a polymer matrix of poly[2-methoxy,5-(2-ethylhexyloxy)-1,4- phenylenevinylene] (MEH-PPV). The electrical characteristics of ZnO tetrapods/MEH-PPV composite devices exhibit an increase in hole mobility up to three orders of magnitude higher than the polymer MEH-PPV device. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 22, article no. 223509 and may be found at https://doi.org/10.1063/1.2740478-
dc.subjectPhysics engineeringen_HK
dc.titleNanocomposite field effect transistors based on zinc oxide/polymer blendsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=22&spage=223509&epage=1 &date=2007&atitle=Nanocomposite+field+effect+transistors+based+on+zinc+oxide/polymer+blendsen_HK
dc.identifier.emailXiang, HF:hfxiang@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityXiang, HF=rp00196en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2740478en_HK
dc.identifier.scopuseid_2-s2.0-34249906985en_HK
dc.identifier.hkuros137076-
dc.identifier.hkuros132467-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249906985&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue22-
dc.identifier.spagearticle no. 223509-
dc.identifier.epagearticle no. 223509-
dc.identifier.isiWOS:000246909900087-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, ZX=8726524500en_HK
dc.identifier.scopusauthoridRoy, VAL=7005870324en_HK
dc.identifier.scopusauthoridStallinga, P=6701332987en_HK
dc.identifier.scopusauthoridMuccini, M=7005486845en_HK
dc.identifier.scopusauthoridToffanin, S=16426609300en_HK
dc.identifier.scopusauthoridXiang, HF=23065758900en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.issnl0003-6951-

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