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Article: Measurements on quantum capacitance of individual single walled carbon nanotubes

TitleMeasurements on quantum capacitance of individual single walled carbon nanotubes
Authors
Dai, JLi, JZeng, HCui, X
KeywordsCapacitance
Energy gap
Semiconductor quantum wires
Single-walled carbon nanotubes (SWCN)
Band gaps
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 94 n. 9, article no. 093114 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3093443
AbstractWe report measurements of the quantum capacitance of individual semiconducting and small band gap single walled carbon nanotubes (SWNTs). The observed quantum capacitance, 82 aF/μm for a semiconducting SWNT with chiral index (16,8) and 10.3 aF/μm for a small band gap SWNT upon Fermi level lying at the first subband are remarkably smaller than those originating from the density of states. We attribute the discrepancy to a strong electron correlation in SWNTs and derive the Luttinger parameter g of 0.25-0.3 for the (16,8) SWNT and of 0.32 for a small band gap SWNT. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/59600
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000264523100074
Funding AgencyGrant Number
Hong Kong GRFHKU 701909
Funding Information:

We thank Guanhua Chen, Jian Wang, and Liwei Chen for helpful discussion. The work was supported by Hong Kong GRF under Grant No. HKU 701909.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDai, Jen_HK
dc.contributor.authorLi, Jen_HK
dc.contributor.authorZeng, Hen_HK
dc.contributor.authorCui, Xen_HK
dc.date.accessioned2010-05-31T03:53:34Z-
dc.date.available2010-05-31T03:53:34Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 94 n. 9, article no. 093114-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59600-
dc.description.abstractWe report measurements of the quantum capacitance of individual semiconducting and small band gap single walled carbon nanotubes (SWNTs). The observed quantum capacitance, 82 aF/μm for a semiconducting SWNT with chiral index (16,8) and 10.3 aF/μm for a small band gap SWNT upon Fermi level lying at the first subband are remarkably smaller than those originating from the density of states. We attribute the discrepancy to a strong electron correlation in SWNTs and derive the Luttinger parameter g of 0.25-0.3 for the (16,8) SWNT and of 0.32 for a small band gap SWNT. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 94 n. 9, article no. 093114 and may be found at https://doi.org/10.1063/1.3093443-
dc.subjectCapacitance-
dc.subjectEnergy gap-
dc.subjectSemiconductor quantum wires-
dc.subjectSingle-walled carbon nanotubes (SWCN)-
dc.subjectBand gaps-
dc.titleMeasurements on quantum capacitance of individual single walled carbon nanotubesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=94&issue=9 , article no. 093114&spage=&epage=&date=2009&atitle=Measurements+on+quantum+capacitance+of+individual+single+walled+carbon+nanotubesen_HK
dc.identifier.emailCui, X: xdcui@hku.hken_HK
dc.identifier.authorityCui, X=rp00689en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3093443en_HK
dc.identifier.scopuseid_2-s2.0-62149103252en_HK
dc.identifier.hkuros161492en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-62149103252&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 093114-
dc.identifier.epagearticle no. 093114-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000264523100074-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDai, J=36722538500en_HK
dc.identifier.scopusauthoridLi, J=8262685700en_HK
dc.identifier.scopusauthoridZeng, H=24466915800en_HK
dc.identifier.scopusauthoridCui, X=10839907500en_HK
dc.identifier.citeulike7020394-
dc.identifier.issnl0003-6951-

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