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Article: Defects in zinc-implanted ZnO thin films

TitleDefects in zinc-implanted ZnO thin films
Authors
Schmidt, MEllguth, MCzekalla, CV Wenckstern, HPickenhain, RGrundmann, MBrauer, GSkorupa, WHelm, MGu, QLing, CC
Issue Date2009
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600 How to Cite?
DOI: http://dx.doi.org/10.1116/1.3086659
AbstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/59652
ISSN
1071-1023
2018 Impact Factor: 1.351
ISI Accession Number ID
WOS:000266500300116
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorSchmidt, Men_HK
dc.contributor.authorEllguth, Men_HK
dc.contributor.authorCzekalla, Cen_HK
dc.contributor.authorV Wenckstern, Hen_HK
dc.contributor.authorPickenhain, Ren_HK
dc.contributor.authorGrundmann, Men_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorHelm, Men_HK
dc.contributor.authorGu, Qen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2010-05-31T03:54:32Z-
dc.date.available2010-05-31T03:54:32Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2009, v. 27 n. 3, p. 1597-1600-
dc.identifier.issn1071-1023en_HK
dc.identifier.urihttp://hdl.handle.net/10722/59652-
dc.description.abstractDefects in zinc-implanted and thermally annealed ZnO thin films were investigated by means of capacitance-voltage spectroscopy (C -V), thermal admittance spectroscopy (TAS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) spectroscopy. The authors report on the formation of two donor states approximately 35 and 190 meV below the conduction band edge, observed by TAS and DLTS, respectively. In the PL spectra of a reference sample a peak at 3.366 eV was present, which diminished after the implantation, while a new peak at 3.364 eV was observed only in the spectrum of the implanted sample. Since only intrinsic ions were implanted, the authors consider the defects formed by the zinc implantation and annealing to be intrinsic. © 2009 American Vacuum Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_HK
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_HK
dc.titleDefects in zinc-implanted ZnO thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.3086659en_HK
dc.identifier.scopuseid_2-s2.0-77955231558en_HK
dc.identifier.hkuros156096en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955231558&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume27en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1597en_HK
dc.identifier.epage1600en_HK
dc.identifier.isiWOS:000266500300116-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSchmidt, M=7404397548en_HK
dc.identifier.scopusauthoridEllguth, M=35106898900en_HK
dc.identifier.scopusauthoridCzekalla, C=22979115600en_HK
dc.identifier.scopusauthoridV Wenckstern, H=6507727905en_HK
dc.identifier.scopusauthoridPickenhain, R=6701673459en_HK
dc.identifier.scopusauthoridGrundmann, M=7005228016en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.scopusauthoridHelm, M=7005352946en_HK
dc.identifier.scopusauthoridGu, Q=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.issnl1071-1023-

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