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Article: GaN/ZnO nanorod light emitting diodes with different emission spectra

TitleGaN/ZnO nanorod light emitting diodes with different emission spectra
Authors
Ng, AMCXi, YYHsu, YFDjuriić, ABChan, WKGwo, STam, HLCheah, KWFong, PWKLui, HFSurya, C
KeywordsAnnealing condition
Backward diodes
Emission spectrums
Epiwafers
GaN epitaxial films
Issue Date2009
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2009, v. 20 n. 44 How to Cite?
DOI: http://dx.doi.org/10.1088/0957-4484/20/44/445201
AbstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/69848
ISSN
0957-4484
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
WOS:000270562900003
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
Outstanding Young Researcher Award ( administrated by The University of Hong Kong)
Hung Hing Ying Physical Sciences Research Fund
Innovation & Technology FundITS/129/08
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award ( administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund grant ITS/129/08 is acknowledged.

References
References in Scopus
Grants
Light Emitting Diodes Fabricated by Electrochemical Methods

 

DC FieldValueLanguage
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjuriić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorGwo, Sen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorLui, HFen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2010-09-06T06:17:23Z-
dc.date.available2010-09-06T06:17:23Z-
dc.date.issued2009en_HK
dc.identifier.citationNanotechnology, 2009, v. 20 n. 44en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/69848-
dc.description.abstractLight emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods. © 2009 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.subjectAnnealing condition-
dc.subjectBackward diodes-
dc.subjectEmission spectrums-
dc.subjectEpiwafers-
dc.subjectGaN epitaxial films-
dc.titleGaN/ZnO nanorod light emitting diodes with different emission spectraen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=20&issue=44, article no. 445021&spage=&epage=&date=2009&atitle=GaN/ZnO+nanorod+light+emitting+diodes+with+different+emission+spectraen_HK
dc.identifier.emailChan, WK:waichan@hku.hken_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/20/44/445201en_HK
dc.identifier.pmid19801783-
dc.identifier.scopuseid_2-s2.0-70349690414en_HK
dc.identifier.hkuros167921en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70349690414&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue44en_HK
dc.identifier.isiWOS:000270562900003-
dc.publisher.placeUnited Kingdomen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjuriić, AB=8533246300en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridLui, HF=36815539600en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.issnl0957-4484-

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