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Article: The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

TitleThe influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs
Authors
Chen, XYNg, AMCFang, FDjurišić, ABChan, WKTam, HLCheah, KWFong, PWKLui, HFSurya, C
KeywordsCurrent voltage curve
Photoluminescence spectrum
Gallium nitride
Light emission
Zinc oxide
Issue Date2010
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311 How to Cite?
DOI: http://dx.doi.org/10.1149/1.3282743
AbstractWe have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/70037
ISSN
0013-4651
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.868
ISI Accession Number ID
WOS:000274321900082
Funding AgencyGrant Number
Strategic Research Theme, University Development Fund
Seed Funding Grant and Outstanding Young Researcher Award
Innovation & Technology FundITS/129/08
Funding Information:

The financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong) and Innovation & Technology Fund grant no. ITS/129/08 is acknowledged.

References
References in Scopus
Grants
Light Emitting Diodes Fabricated by Electrochemical Methods

 

DC FieldValueLanguage
dc.contributor.authorChen, XYen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorFang, Fen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorLui, HFen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2010-09-06T06:19:07Z-
dc.date.available2010-09-06T06:19:07Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2010, v. 157 n. 3, p. H308-H311en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/70037-
dc.description.abstractWe have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission. © 2010 The Electrochemical Society.en_HK
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.rightsJournal of the Electrochemical Society. Copyright © Electrochemical Society, Inc.en_HK
dc.subjectCurrent voltage curve-
dc.subjectPhotoluminescence spectrum-
dc.subjectGallium nitride-
dc.subjectLight emission-
dc.subjectZinc oxide-
dc.titleThe influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0013-4651&volume=157&spage=H308&epage=H311&date=2010&atitle=The+influence+of+the+ZnO+seed+layer+on+the+ZnO+nanorod/GaN+LEDsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/1.3282743en_HK
dc.identifier.scopuseid_2-s2.0-76349103077en_HK
dc.identifier.hkuros168663en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-76349103077&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume157en_HK
dc.identifier.issue3en_HK
dc.identifier.spageH308en_HK
dc.identifier.epageH311en_HK
dc.identifier.isiWOS:000274321900082-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectLight Emitting Diodes Fabricated by Electrochemical Methods-
dc.identifier.scopusauthoridChen, XY=22933917300en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridFang, F=7202929817en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridLui, HF=36815539600en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.issnl0013-4651-

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