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Article: Defect emissions in ZnO nanostructures

TitleDefect emissions in ZnO nanostructures
Authors
Issue Date2007
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2007, v. 18 n. 9, p. 095702 How to Cite?
AbstractDefects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions. © IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/70385
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorZhong, YCen_HK
dc.contributor.authorWong, KSen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorTam, HLen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorKwok, WMen_HK
dc.contributor.authorPhillips, DLen_HK
dc.date.accessioned2010-09-06T06:22:22Z-
dc.date.available2010-09-06T06:22:22Z-
dc.date.issued2007en_HK
dc.identifier.citationNanotechnology, 2007, v. 18 n. 9, p. 095702en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/70385-
dc.description.abstractDefects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions. © IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.titleDefect emissions in ZnO nanostructuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=18&spage=095702: 1&epage=8&date=2007&atitle=Defect+emissions+in+ZnO+nanostructuresen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailPhillips, DL: phillips@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityPhillips, DL=rp00770en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/18/9/095702en_HK
dc.identifier.scopuseid_2-s2.0-33947510248en_HK
dc.identifier.hkuros125763en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947510248&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume18en_HK
dc.identifier.issue9, p. 095702en_HK
dc.identifier.isiWOS:000245219800018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDing, L=10639111500en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridZhong, YC=8623189300en_HK
dc.identifier.scopusauthoridWong, KS=7404759949en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridTam, HL=7101835048en_HK
dc.identifier.scopusauthoridCheah, KW=7102792922en_HK
dc.identifier.scopusauthoridKwok, WM=7103129332en_HK
dc.identifier.scopusauthoridPhillips, DL=7404519365en_HK
dc.identifier.citeulike2057887-
dc.identifier.issnl0957-4484-

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