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Article: Current-induced electroresistance in tetravalent cation-doped La0.9Hf0.1MnO3 epitaxial thin films

TitleCurrent-induced electroresistance in tetravalent cation-doped La0.9Hf0.1MnO3 epitaxial thin films
Authors
KeywordsElectroresistance
La0.9Hf0.1MnO3
Thin film
Issue Date2007
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb
Citation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2007, v. 144, p. 97-99 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/80427
ISSN
2023 Impact Factor: 6.1
2023 SCImago Journal Rankings: 1.660
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorWang, Len_HK
dc.date.accessioned2010-09-06T08:06:20Z-
dc.date.available2010-09-06T08:06:20Z-
dc.date.issued2007en_HK
dc.identifier.citationMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, 2007, v. 144, p. 97-99en_HK
dc.identifier.issn0921-5093en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80427-
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseben_HK
dc.relation.ispartofMaterials Science and Engineering B: Solid-State Materials for Advanced Technologyen_HK
dc.subjectElectroresistance-
dc.subjectLa0.9Hf0.1MnO3-
dc.subjectThin film-
dc.titleCurrent-induced electroresistance in tetravalent cation-doped La0.9Hf0.1MnO3 epitaxial thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-5093&volume=144&spage=97&epage=99&date=2007&atitle=Current-induced+electroresistance+in+tetravalent+cation-doped+La0.9Hf0.1MnO3+epitaxial+thin+filmsen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.identifier.scopuseid_2-s2.0-35748952797-
dc.identifier.hkuros138844en_HK
dc.identifier.isiWOS:000251744600021-
dc.identifier.issnl0921-5093-

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