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Article: Straight and helical InGaN core-shell nanowires with a high in core content

TitleStraight and helical InGaN core-shell nanowires with a high in core content
Authors
Cai, XMLeung, YHCheung, KYTam, KHDjuriić, ABXie, MHChen, HYGwo, S
Issue Date2006
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2006, v. 17 n. 9, p. 2330-2333 How to Cite?
DOI: http://dx.doi.org/10.1088/0957-4484/17/9/042
AbstractIn 1-xGa xN nanowires were fabricated in a tube furnace by chemical vapour deposition, with Ga, In and NH 3 as the starting materials and Au as the catalyst. Scanning electron microscopy showed that a mixture of straight and helical In 1-xGa xN nanowires was obtained. Transmission electron microscopy (TEM) revealed that both types of nanowire exhibited core-shell structures. The crystal structure of the samples was studied by high resolution TEM and x-ray diffraction, and both cubic and hexagonal phases were found. Energy dispersive x-ray spectroscopy showed that the core had a high In content and the shell had a low In content. The nanowires were also characterized by photoluminescence. The mechanism of formation for the helical nanowires and core-shell structure is discussed. © 2006 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80483
ISSN
0957-4484
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
WOS:000238220900043
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorCheung, KYen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorDjuriić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorChen, HYen_HK
dc.contributor.authorGwo, Sen_HK
dc.date.accessioned2010-09-06T08:06:57Z-
dc.date.available2010-09-06T08:06:57Z-
dc.date.issued2006en_HK
dc.identifier.citationNanotechnology, 2006, v. 17 n. 9, p. 2330-2333en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80483-
dc.description.abstractIn 1-xGa xN nanowires were fabricated in a tube furnace by chemical vapour deposition, with Ga, In and NH 3 as the starting materials and Au as the catalyst. Scanning electron microscopy showed that a mixture of straight and helical In 1-xGa xN nanowires was obtained. Transmission electron microscopy (TEM) revealed that both types of nanowire exhibited core-shell structures. The crystal structure of the samples was studied by high resolution TEM and x-ray diffraction, and both cubic and hexagonal phases were found. Energy dispersive x-ray spectroscopy showed that the core had a high In content and the shell had a low In content. The nanowires were also characterized by photoluminescence. The mechanism of formation for the helical nanowires and core-shell structure is discussed. © 2006 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.titleStraight and helical InGaN core-shell nanowires with a high in core contenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=17&spage=2330&epage=2333&date=2006&atitle=Straight+and+helical+InGaN+core-shell+nanowires+with+a+high+In+core+contenten_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/17/9/042en_HK
dc.identifier.scopuseid_2-s2.0-33646183924en_HK
dc.identifier.hkuros115315en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33646183924&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue9en_HK
dc.identifier.spage2330en_HK
dc.identifier.epage2333en_HK
dc.identifier.isiWOS:000238220900043-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridCai, XM=8923610200en_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.scopusauthoridCheung, KY=25229974800en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridDjuriić, AB=8533246300en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridChen, HY=24429084600en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK
dc.identifier.issnl0957-4484-

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