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Conference Paper: Sensitivity of LR 115 SSNTD in a diffusion chamber

TitleSensitivity of LR 115 SSNTD in a diffusion chamber
Authors
KeywordsDiffusion chamber
LR 115 detector
Sensitivity
Solid-state nuclear track detector
Issue Date2007
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/nimb
Citation
The 6th Topical Meeting on Industrial Radiation and Radioisotope Measurement Applications, Hamilton, Canada, 20–24 June 2005. In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, v. 263 n. 1, p. 306–310 How to Cite?
AbstractSolid-state nuclear track detectors (SSNTDs), such as LR 115, have been commonly used in diffusion chambers for long-term measurements of radon gas concentrations. For the LR 115 SSNTD, it has been found that the active layer removed during chemical etching is significantly affected by the presence and amount of stirring, and thus cannot be controlled easily. However, the sensitivity of the LR 115 detector inside a diffusion chamber to the radon and/or thoron gas concentration is dependent on the actual removed active layer thickness. This relationship is dependant on the geometry of the diffusion chamber and the deposition fraction of 218Po in the diffusion chamber, as well as the V function for the LR 115 detector (V is the ratio between the track etch velocity V t to the bulk etch velocity V b). This paper presents the experimentally determined relationships between the sensitivity of the LR 115 detector inside a Karlsruhe diffusion chamber and the removed active layer thickness, for both radon and thoron. A V function was adjusted to simulate the relationships. In particular, for the case of 222Rn, we have found f ∼ 0.5, where f is the fraction of 218Po which decays inside the diffusion chamber before deposition onto available inner surfaces of the chamber. In conclusion, we have found that the sensitivities critically depend on the actual removed active layer thickness, so this should be monitored and used in determining the sensitivities. © 2007 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80529
ISSN
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.366
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLeung, SYYen_HK
dc.contributor.authorNikezic, Den_HK
dc.contributor.authorLeung, JKCen_HK
dc.contributor.authorYu, KNen_HK
dc.date.accessioned2010-09-06T08:07:27Z-
dc.date.available2010-09-06T08:07:27Z-
dc.date.issued2007en_HK
dc.identifier.citationThe 6th Topical Meeting on Industrial Radiation and Radioisotope Measurement Applications, Hamilton, Canada, 20–24 June 2005. In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, v. 263 n. 1, p. 306–310en_HK
dc.identifier.issn0168-583Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/80529-
dc.description.abstractSolid-state nuclear track detectors (SSNTDs), such as LR 115, have been commonly used in diffusion chambers for long-term measurements of radon gas concentrations. For the LR 115 SSNTD, it has been found that the active layer removed during chemical etching is significantly affected by the presence and amount of stirring, and thus cannot be controlled easily. However, the sensitivity of the LR 115 detector inside a diffusion chamber to the radon and/or thoron gas concentration is dependent on the actual removed active layer thickness. This relationship is dependant on the geometry of the diffusion chamber and the deposition fraction of 218Po in the diffusion chamber, as well as the V function for the LR 115 detector (V is the ratio between the track etch velocity V t to the bulk etch velocity V b). This paper presents the experimentally determined relationships between the sensitivity of the LR 115 detector inside a Karlsruhe diffusion chamber and the removed active layer thickness, for both radon and thoron. A V function was adjusted to simulate the relationships. In particular, for the case of 222Rn, we have found f ∼ 0.5, where f is the fraction of 218Po which decays inside the diffusion chamber before deposition onto available inner surfaces of the chamber. In conclusion, we have found that the sensitivities critically depend on the actual removed active layer thickness, so this should be monitored and used in determining the sensitivities. © 2007 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/nimben_HK
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atomsen_HK
dc.rightsNuclear Instruments & Methods in Physics Research Section B Beam Interactions with Materials and Atoms. Copyright © Elsevier BV.en_HK
dc.subjectDiffusion chamberen_HK
dc.subjectLR 115 detectoren_HK
dc.subjectSensitivityen_HK
dc.subjectSolid-state nuclear track detectoren_HK
dc.titleSensitivity of LR 115 SSNTD in a diffusion chamberen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0168-9002&volume=263&spage=306&epage=310&date=2007&atitle=Sensitivity+of+LR+115+SSNTD+in+a+diffusion+chamberen_HK
dc.identifier.emailLeung, JKC: jkcleung@hku.hken_HK
dc.identifier.authorityLeung, JKC=rp00732en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.nimb.2007.04.116en_HK
dc.identifier.scopuseid_2-s2.0-34548857899en_HK
dc.identifier.hkuros137808en_HK
dc.identifier.hkuros112555-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34548857899&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume263en_HK
dc.identifier.issue1 SPEC. ISS.en_HK
dc.identifier.spage306en_HK
dc.identifier.epage310en_HK
dc.identifier.isiWOS:000250798000063-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLeung, SYY=55168680800en_HK
dc.identifier.scopusauthoridNikezic, D=35614145500en_HK
dc.identifier.scopusauthoridLeung, JKC=24080627200en_HK
dc.identifier.scopusauthoridYu, KN=7403385896en_HK
dc.identifier.issnl0168-583X-

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