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Article: Resistive switching in aluminum/anodized aluminum film structure without forming process

TitleResistive switching in aluminum/anodized aluminum film structure without forming process
Authors
Zhu, WChen, TPLiu, ZYang, MLiu, YFung, S
KeywordsMetal-insulator-metal structures
Aluminum film
Anodizing aluminum
Conductive filaments
Electron hopping
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2009, v. 106 n. 9, article no. 093706 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3253722
AbstractMetal-insulator-metal (MIM) structure was fabricated by partially anodizing aluminum film followed by deposition of another aluminum film. Unipolar resistive switching between a high-resistance state and a low-resistance state with a high resistance ratio (> ∼ 10 4) was observed from the structure. The switching occurred without the requirement of a forming process, which was attributed to the pre-existing conductive filaments in the Al-rich Al x O y layer formed by the anodization. Each resistance state exhibited Ohmic behavior which could be explained by the metallic conduction and electron hopping from one isolated state to the next in the Al-rich Al x O y layer. The MIM structure showed good memory characteristics. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80535
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000272555700046
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
National Natural Science Foundation of China (NSFC)60806040
Funding Information:

This work has been financially supported by National Research Foundation of Singapore (NRF-G-CRP 2007-01). Y. Liu acknowledges National Natural Science Foundation of China (NSFC) under Project No. 60806040

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Zen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:07:31Z-
dc.date.available2010-09-06T08:07:31Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Applied Physics, 2009, v. 106 n. 9, article no. 093706-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80535-
dc.description.abstractMetal-insulator-metal (MIM) structure was fabricated by partially anodizing aluminum film followed by deposition of another aluminum film. Unipolar resistive switching between a high-resistance state and a low-resistance state with a high resistance ratio (> ∼ 10 4) was observed from the structure. The switching occurred without the requirement of a forming process, which was attributed to the pre-existing conductive filaments in the Al-rich Al x O y layer formed by the anodization. Each resistance state exhibited Ohmic behavior which could be explained by the metallic conduction and electron hopping from one isolated state to the next in the Al-rich Al x O y layer. The MIM structure showed good memory characteristics. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 106 n. 9, article no. 093706 and may be found at https://doi.org/10.1063/1.3253722-
dc.subjectMetal-insulator-metal structures-
dc.subjectAluminum film-
dc.subjectAnodizing aluminum-
dc.subjectConductive filaments-
dc.subjectElectron hopping-
dc.titleResistive switching in aluminum/anodized aluminum film structure without forming processen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=106&issue=9, article no. 093706&spage=&epage=&date=2009&atitle=Resistive+switching+in+aluminum/anodized+aluminum+film+structure+without+forming+processen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3253722en_HK
dc.identifier.scopuseid_2-s2.0-70450260461en_HK
dc.identifier.hkuros169428en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70450260461&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 093706-
dc.identifier.epagearticle no. 093706-
dc.identifier.isiWOS:000272555700046-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, W=7404232937en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Z=7406680497en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0021-8979-

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