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Article: H-vacancy complex VInH4 abundance and its influences in n-type LEC InP

TitleH-vacancy complex VInH4 abundance and its influences in n-type LEC InP
Authors
Fung, SZhao, YSun, NBeling, CDChen, XBi, KWu, XZhang, JSun, T
Issue Date2000
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2000, v. 211 n. 1, p. 174-178 How to Cite?
DOI: http://dx.doi.org/10.1016/S0022-0248(99)00858-1
AbstractA hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP is measured by infrared absorption spectroscopy in wafers sliced from the seed-end, middle and tail of an ingot. The concentration of VInH4 is found much lower in wafers sliced from the ingot tail. The concentration of VInH4 in Fe-doped InP is higher than that of the undoped InP. The concentration change of VInH4 in an InP ingot is qualitatively in agreement with the mass action law expectation based on defect reactions. The influence of this complex on the electrical properties of n-type LEC undoped and Fe-doped InP is discussed. The high concentration of VInH4 in the seed-end of an InP ingot correlates with two facts. The first is the high threshold concentrations of Fe and Zn required to get semi-insulating and p-type material, respectively. The second is that there is a large thermally induced reduction of carrier concentration in seed-end InP wafers than that of wafers from the ingot tail. The results reveal the influence of VInH4 on the thermal stability of InP material due to the fact that the bond of hydrogen complex is weak and dissociates easily upon annealing. This dissociation has a relationship with the defects formed in high-temperature annealed InP, which are involved in the electrical compensation.
Persistent Identifierhttp://hdl.handle.net/10722/80539
ISSN
0022-0248
2023 Impact Factor: 1.7
2023 SCImago Journal Rankings: 0.379
ISI Accession Number ID
WOS:000086199600030
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorSun, Nen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorBi, Ken_HK
dc.contributor.authorWu, Xen_HK
dc.contributor.authorZhang, Jen_HK
dc.contributor.authorSun, Ten_HK
dc.date.accessioned2010-09-06T08:07:34Z-
dc.date.available2010-09-06T08:07:34Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal Of Crystal Growth, 2000, v. 211 n. 1, p. 174-178en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80539-
dc.description.abstractA hydrogen indium vacancy complex VInH4 in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP is measured by infrared absorption spectroscopy in wafers sliced from the seed-end, middle and tail of an ingot. The concentration of VInH4 is found much lower in wafers sliced from the ingot tail. The concentration of VInH4 in Fe-doped InP is higher than that of the undoped InP. The concentration change of VInH4 in an InP ingot is qualitatively in agreement with the mass action law expectation based on defect reactions. The influence of this complex on the electrical properties of n-type LEC undoped and Fe-doped InP is discussed. The high concentration of VInH4 in the seed-end of an InP ingot correlates with two facts. The first is the high threshold concentrations of Fe and Zn required to get semi-insulating and p-type material, respectively. The second is that there is a large thermally induced reduction of carrier concentration in seed-end InP wafers than that of wafers from the ingot tail. The results reveal the influence of VInH4 on the thermal stability of InP material due to the fact that the bond of hydrogen complex is weak and dissociates easily upon annealing. This dissociation has a relationship with the defects formed in high-temperature annealed InP, which are involved in the electrical compensation.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.en_HK
dc.titleH-vacancy complex VInH4 abundance and its influences in n-type LEC InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=211&spage=174&epage=178&date=2000&atitle=H-Vacancy+Complex+VInH4+Abundance+and+Its+Influences+in+n-Type+LEC+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0022-0248(99)00858-1en_HK
dc.identifier.scopuseid_2-s2.0-0033871064en_HK
dc.identifier.hkuros48467en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033871064&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume211en_HK
dc.identifier.issue1en_HK
dc.identifier.spage174en_HK
dc.identifier.epage178en_HK
dc.identifier.isiWOS:000086199600030-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridSun, N=7202556986en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridChen, X=26642908200en_HK
dc.identifier.scopusauthoridBi, K=7004436355en_HK
dc.identifier.scopusauthoridWu, X=7407065357en_HK
dc.identifier.scopusauthoridZhang, J=7601347616en_HK
dc.identifier.scopusauthoridSun, T=7402922751en_HK
dc.identifier.issnl0022-0248-

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