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Article: Electrical transport properties of annealed undoped InP

TitleElectrical transport properties of annealed undoped InP
Authors
Zhao, YLuo, YSun, NFeng, SBeling, CDSun, TLin, L
KeywordsAnnealing
Indium phosphide
Semi-insulating
Issue Date2002
PublisherLondon Corn Circular.
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 1, p. 1-5 How to Cite?
AbstractThe electrical properties of ameadled undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, respectively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.
Persistent Identifierhttp://hdl.handle.net/10722/80588
ISSN
0253-4177
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorLuo, Yen_HK
dc.contributor.authorSun, Nen_HK
dc.contributor.authorFeng, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorSun, Ten_HK
dc.contributor.authorLin, Len_HK
dc.date.accessioned2010-09-06T08:08:06Z-
dc.date.available2010-09-06T08:08:06Z-
dc.date.issued2002en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 1, p. 1-5en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80588-
dc.description.abstractThe electrical properties of ameadled undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, respectively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.en_HK
dc.languageengen_HK
dc.publisherLondon Corn Circular.en_HK
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.subjectAnnealingen_HK
dc.subjectIndium phosphideen_HK
dc.subjectSemi-insulatingen_HK
dc.titleElectrical transport properties of annealed undoped InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0899-9988&volume=23&spage=1&epage=5&date=2002&atitle=Electrical+transport+properties+of+annealed+undoped+InPen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0036037852en_HK
dc.identifier.hkuros65720en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036037852&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume23en_HK
dc.identifier.issue1en_HK
dc.identifier.spage1en_HK
dc.identifier.epage5en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridLuo, Y=7404333050en_HK
dc.identifier.scopusauthoridSun, N=7202556986en_HK
dc.identifier.scopusauthoridFeng, S=7402531622en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridSun, T=7402922751en_HK
dc.identifier.scopusauthoridLin, L=7404131111en_HK
dc.identifier.issnl0253-4177-

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