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Article: Hydrogen peroxide treatment induced rectifying behavior of Aun-ZnO contact

TitleHydrogen peroxide treatment induced rectifying behavior of Aun-ZnO contact
Authors
Gu, QLLing, CCChen, XDCheng, CKNg, AMCBeling, CDFung, SDjurišić, ABLu, LWBrauer, GOng, HC
KeywordsContamination
Deep level transient spectroscopy
Ohmic contacts
Positron annihilation spectroscopy
X ray photoelectron spectroscopy
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 12, article no. 122101 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2715025
AbstractConversion of the Aun-ZnO contact from Ohmic to rectifying with H2 O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2 O2 treatment did not affect the carbon surface contamination or the EC -0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80600
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000245135800059
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorGu, QLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorCheng, CKen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLu, LWen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorOng, HCen_HK
dc.date.accessioned2010-09-06T08:08:14Z-
dc.date.available2010-09-06T08:08:14Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 12, article no. 122101-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80600-
dc.description.abstractConversion of the Aun-ZnO contact from Ohmic to rectifying with H2 O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2 O2 treatment did not affect the carbon surface contamination or the EC -0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 12, article no. 122101 and may be found at https://doi.org/10.1063/1.2715025-
dc.subjectContamination-
dc.subjectDeep level transient spectroscopy-
dc.subjectOhmic contacts-
dc.subjectPositron annihilation spectroscopy-
dc.subjectX ray photoelectron spectroscopy-
dc.titleHydrogen peroxide treatment induced rectifying behavior of Aun-ZnO contacten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&spage=122101: 1&epage=3&date=2007&atitle=Hydrogen+peroxide+treatment+induced+rectifying+behavior+of+Au/n-ZnO+contacten_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLu, LW: liweilu@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLu, LW=rp00477en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2715025en_HK
dc.identifier.scopuseid_2-s2.0-33947590299en_HK
dc.identifier.hkuros126284en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947590299&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue12en_HK
dc.identifier.spagearticle no. 122101-
dc.identifier.epagearticle no. 122101-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000245135800059-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridCheng, CK=55231834000en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLu, LW=7403963552en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridOng, HC=7102298056en_HK
dc.identifier.issnl0003-6951-

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