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Article: Positron beam profiling study of the metal-GaAs interface

TitlePositron beam profiling study of the metal-GaAs interface
Authors
Ling, CCWeng, HMHu, YFBeling, CDFung, S
Issue Date1997
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 1997, v. 116, p. 256-262 How to Cite?
AbstractProperties of metal contacts on III-V semiconductors are dependent on the electronegativity of the metal. Generally metals have been classified into three categories according to their behaviour upon heat treatment. Au, Ni and W are the three metals belonging to different categories with the descending order of electronegativity. In this study a low energy positron beam has been used to investigate as-grown Au/GaAs (SI), Ni/GaAs (SI) and W/GaAs (SI) samples with different thicknesses of metal overlayers. The method that has been employed is that of monitoring the Doppler broadening of annihilation radiation through S parameter measurements as a function of the beam energy. The S-E data were analysed by the program VEPFIT with different models and different implantation profiles. It is found that the interfacial information able to be extracted from the fitting is limited by present uncertainties in the implantation profile.
Persistent Identifierhttp://hdl.handle.net/10722/80602
ISSN
0169-4332
2023 Impact Factor: 6.3
2023 SCImago Journal Rankings: 1.210
ISI Accession Number ID
WOS:A1997XB40300050
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:08:16Z-
dc.date.available2010-09-06T08:08:16Z-
dc.date.issued1997en_HK
dc.identifier.citationApplied Surface Science, 1997, v. 116, p. 256-262en_HK
dc.identifier.issn0169-4332en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80602-
dc.description.abstractProperties of metal contacts on III-V semiconductors are dependent on the electronegativity of the metal. Generally metals have been classified into three categories according to their behaviour upon heat treatment. Au, Ni and W are the three metals belonging to different categories with the descending order of electronegativity. In this study a low energy positron beam has been used to investigate as-grown Au/GaAs (SI), Ni/GaAs (SI) and W/GaAs (SI) samples with different thicknesses of metal overlayers. The method that has been employed is that of monitoring the Doppler broadening of annihilation radiation through S parameter measurements as a function of the beam energy. The S-E data were analysed by the program VEPFIT with different models and different implantation profiles. It is found that the interfacial information able to be extracted from the fitting is limited by present uncertainties in the implantation profile.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_HK
dc.relation.ispartofApplied Surface Scienceen_HK
dc.rightsApplied Surface Science. Copyright © Elsevier BV.en_HK
dc.titlePositron beam profiling study of the metal-GaAs interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0169-4332&volume=116&spage=256&epage=262&date=1997&atitle=Positron+Beam+Profiling+Study+of+The+Metal-GaAs+Interfaceen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0031547909en_HK
dc.identifier.hkuros22660en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031547909&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume116en_HK
dc.identifier.spage256en_HK
dc.identifier.epage262en_HK
dc.identifier.isiWOS:A1997XB40300050-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0169-4332-

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