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Article: Epitaxial Mg2SiO4 thin films with a spinel structure grown on Si substrates

TitleEpitaxial Mg2SiO4 thin films with a spinel structure grown on Si substrates
Authors
KeywordsA1. Crystal structure
A1. X-ray diffraction
A3. Epitaxial growth
A3. Mg2SiO4 thin film
A3. Physical vapor deposition processes
B2. Dielectric materials
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal of Crystal Growth, 2006, v. 297, p. 100-104 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/80652
ISSN
2023 Impact Factor: 1.7
2023 SCImago Journal Rankings: 0.379
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKang, Len_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorXu, Hen_HK
dc.contributor.authorZhao, SQen_HK
dc.contributor.authorChen, Hen_HK
dc.contributor.authorWu, PHen_HK
dc.date.accessioned2010-09-06T08:08:48Z-
dc.date.available2010-09-06T08:08:48Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal of Crystal Growth, 2006, v. 297, p. 100-104en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80652-
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.en_HK
dc.subjectA1. Crystal structure-
dc.subjectA1. X-ray diffraction-
dc.subjectA3. Epitaxial growth-
dc.subjectA3. Mg2SiO4 thin film-
dc.subjectA3. Physical vapor deposition processes-
dc.subjectB2. Dielectric materials-
dc.titleEpitaxial Mg2SiO4 thin films with a spinel structure grown on Si substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=297&spage=100&epage=104&date=2006&atitle=Epitaxial+Mg2SiO4+thin+films+with+a+spinel+structure+grown+on+Si+substratesen_HK
dc.identifier.emailKang, L: kanglin@nju.edu.cnen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.identifier.scopuseid_2-s2.0-37849186143-
dc.identifier.hkuros130804en_HK
dc.identifier.isiWOS:000243252500018-
dc.identifier.issnl0022-0248-

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