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Article: Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots

TitleInfluence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots
Authors
Yang, MXu, SJWang, J
KeywordsIndium arsenide
Interfaces (materials)
Semiconducting gallium arsenide
Strain
Wetting
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 8, article no. 083112 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2841065
AbstractThe strain distribution in single and double self-assembled InAsGaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80694
ISSN
0003-6951
2022 Impact Factor: 4.0
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000254297300082
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, Men_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2010-09-06T08:09:16Z-
dc.date.available2010-09-06T08:09:16Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 8, article no. 083112-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80694-
dc.description.abstractThe strain distribution in single and double self-assembled InAsGaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2008, v. 92 n. 8, article no. 083112 and may be found at https://doi.org/10.1063/1.2841065-
dc.subjectIndium arsenide-
dc.subjectInterfaces (materials)-
dc.subjectSemiconducting gallium arsenide-
dc.subjectStrain-
dc.subjectWetting-
dc.titleInfluence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dotsen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2841065en_HK
dc.identifier.scopuseid_2-s2.0-40049090825en_HK
dc.identifier.hkuros141607en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-40049090825&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue8en_HK
dc.identifier.spagearticle no. 083112-
dc.identifier.epagearticle no. 083112-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000254297300082-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, M=7404926913en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, J=37262424300en_HK
dc.identifier.issnl0003-6951-

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