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Article: Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

TitleProbing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts
Authors
Wang, RXXu, SJShi, SLBeling, CDFung, SZhao, DGYang, HTao, XM
KeywordsBias voltage
Epilayers
Gan epilayers
Schottky contacts
Capacitance
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 14, article no. 143505 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2358207
AbstractUnder identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/80737
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000241056900117
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorShi, SLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorTao, XMen_HK
dc.date.accessioned2010-09-06T08:09:43Z-
dc.date.available2010-09-06T08:09:43Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 14, article no. 143505-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80737-
dc.description.abstractUnder identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. © 2006 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 89 n. 14, article no. 143505 and may be found at https://doi.org/10.1063/1.2358207-
dc.subjectBias voltage-
dc.subjectEpilayers-
dc.subjectGan epilayers-
dc.subjectSchottky contacts-
dc.subjectCapacitance-
dc.titleProbing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contactsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&spage=143505: 1&epage=3&date=2006&atitle=Probing+deep+level+centers+in+GaN+epilayers+with+variable-frequency+capacitance-voltage+characteristics+of+Au/GaN+Schottky+contactsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2358207en_HK
dc.identifier.scopuseid_2-s2.0-33749489611en_HK
dc.identifier.hkuros123757en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749489611&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue14en_HK
dc.identifier.spagearticle no. 143505-
dc.identifier.epagearticle no. 143505-
dc.identifier.isiWOS:000241056900117-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=14038407200en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridTao, XM=7202692140en_HK
dc.identifier.issnl0003-6951-

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