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Article: A simple method for growing high quantity tungsten-oxide nanoribbons under moist conditions

TitleA simple method for growing high quantity tungsten-oxide nanoribbons under moist conditions
Authors
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2005, v. 16 n. 9, p. 1608-1611 How to Cite?
AbstractTungsten oxide is one of the most important transition metal oxide materials, which possesses some unique properties such as electrochromic, optochromic, and gaschromic properties. In this paper, we report a simple method for synthesizing high quantity tungsten oxide nanoribbons by oxidizing a tungsten plate under moist conditions. Using potassium iodide as the catalyst, tungsten oxide nanoribbons with a thickness of 40-100 nm, width up to 1 νm and length up to hundreds of micrometres are obtained on a large scale. The morphology, composition and crystal structure of the nanoribbons are characterized by various methods, such as scanning electron microscopy, transmission electron microscopy and x-ray diffraction. The nanoribbons comprise mainly monoclinic tungsten trioxide (WO 3) growing along the [001] direction and the orthorhombic WO 3(H 2O) 0.33. The measured lattice parameters are β ≤ 89.93°, a ≤ 0.7274 nm, b ≤ 0.7501 nm, c ≤ 0.3824 nm for WO 3 and a ≤ 0.7359 nm, b ≤ 1.251 nm, c ≤ 0.7704 nm for WO 3(H 2O) 0.33, respectively. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80744
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHong, Ken_HK
dc.contributor.authorYiu, Wen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorXie, Men_HK
dc.date.accessioned2010-09-06T08:09:48Z-
dc.date.available2010-09-06T08:09:48Z-
dc.date.issued2005en_HK
dc.identifier.citationNanotechnology, 2005, v. 16 n. 9, p. 1608-1611en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80744-
dc.description.abstractTungsten oxide is one of the most important transition metal oxide materials, which possesses some unique properties such as electrochromic, optochromic, and gaschromic properties. In this paper, we report a simple method for synthesizing high quantity tungsten oxide nanoribbons by oxidizing a tungsten plate under moist conditions. Using potassium iodide as the catalyst, tungsten oxide nanoribbons with a thickness of 40-100 nm, width up to 1 νm and length up to hundreds of micrometres are obtained on a large scale. The morphology, composition and crystal structure of the nanoribbons are characterized by various methods, such as scanning electron microscopy, transmission electron microscopy and x-ray diffraction. The nanoribbons comprise mainly monoclinic tungsten trioxide (WO 3) growing along the [001] direction and the orthorhombic WO 3(H 2O) 0.33. The measured lattice parameters are β ≤ 89.93°, a ≤ 0.7274 nm, b ≤ 0.7501 nm, c ≤ 0.3824 nm for WO 3 and a ≤ 0.7359 nm, b ≤ 1.251 nm, c ≤ 0.7704 nm for WO 3(H 2O) 0.33, respectively. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.titleA simple method for growing high quantity tungsten-oxide nanoribbons under moist conditionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=16&spage=1608&epage=1611&date=2005&atitle=A+Simple+Method+For+Growing+High+Quantity+Tungsten-oxide+Nanoribbons+Under+Moist+Conditionsen_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.emailXie, M: mhxie@hku.hken_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.identifier.authorityXie, M=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/16/9/034en_HK
dc.identifier.scopuseid_2-s2.0-23444459323en_HK
dc.identifier.hkuros131978en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-23444459323&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1608en_HK
dc.identifier.epage1611en_HK
dc.identifier.isiWOS:000232089500034-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridHong, K=8657303000en_HK
dc.identifier.scopusauthoridYiu, W=8045008200en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridGao, J=37262424300en_HK
dc.identifier.scopusauthoridXie, M=7202255416en_HK
dc.identifier.citeulike250792-
dc.identifier.issnl0957-4484-

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