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Article: Hydrogenated nanocrystalline silicon carbide films synthesized by ECR-CVD and its intense visible photoluminescence at room temperature
Title | Hydrogenated nanocrystalline silicon carbide films synthesized by ECR-CVD and its intense visible photoluminescence at room temperature |
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Authors | |
Issue Date | 2000 |
Publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf |
Citation | Thin Solid Films, 2000, v. 377-378, p. 177-181 How to Cite? |
Abstract | Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films, which contain nanosize SiC crystals embedded in a-SiC:H matrix were fabricated by the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. It was found that under the deposition conditions of strong hydrogen dilutions and high microwave power, films containing SiC nanocrystallites embedded in an SiC:H amorphous matrix could be obtained, as shown by the use of high resolution transmission electron microscopy. Infrared absorption, Raman scattering and X-ray photoelectron spectroscopy studies have also confirmed the successful fabrication of these nc-SiC:H films. Very strong photoluminescence in the visible range with a peak energy of 2.64 eV could be observed from these films at room temperature. Temporal evolution of the PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of ps and ns. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. The results obtained in this study show that these nc-SiC:H films are potentially suitable as active layers in large area flat panel displays. |
Persistent Identifier | http://hdl.handle.net/10722/80830 |
ISSN | 2023 Impact Factor: 2.0 2023 SCImago Journal Rankings: 0.400 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Yu, MB | en_HK |
dc.contributor.author | Rusli | en_HK |
dc.contributor.author | Yoon, SF | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Chew, K | en_HK |
dc.contributor.author | Cui, J | en_HK |
dc.contributor.author | Ahn, J | en_HK |
dc.contributor.author | Zhang, Q | en_HK |
dc.date.accessioned | 2010-09-06T08:10:45Z | - |
dc.date.available | 2010-09-06T08:10:45Z | - |
dc.date.issued | 2000 | en_HK |
dc.identifier.citation | Thin Solid Films, 2000, v. 377-378, p. 177-181 | en_HK |
dc.identifier.issn | 0040-6090 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80830 | - |
dc.description.abstract | Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films, which contain nanosize SiC crystals embedded in a-SiC:H matrix were fabricated by the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. It was found that under the deposition conditions of strong hydrogen dilutions and high microwave power, films containing SiC nanocrystallites embedded in an SiC:H amorphous matrix could be obtained, as shown by the use of high resolution transmission electron microscopy. Infrared absorption, Raman scattering and X-ray photoelectron spectroscopy studies have also confirmed the successful fabrication of these nc-SiC:H films. Very strong photoluminescence in the visible range with a peak energy of 2.64 eV could be observed from these films at room temperature. Temporal evolution of the PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of ps and ns. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. The results obtained in this study show that these nc-SiC:H films are potentially suitable as active layers in large area flat panel displays. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf | en_HK |
dc.relation.ispartof | Thin Solid Films | en_HK |
dc.title | Hydrogenated nanocrystalline silicon carbide films synthesized by ECR-CVD and its intense visible photoluminescence at room temperature | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=377-378&spage=177&epage=181&date=2000&atitle=Hydrogenated+Nanocrystalline+Silicon+Carbide+Films+Synthesized+by+ECR-CVD+And+Its+Intense+Visible+Photoluminescence+at+Room+Temperature | en_HK |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/S0040-6090(00)01426-7 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0034515076 | en_HK |
dc.identifier.hkuros | 65104 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0034515076&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 377-378 | en_HK |
dc.identifier.spage | 177 | en_HK |
dc.identifier.epage | 181 | en_HK |
dc.identifier.isi | WOS:000166024600030 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Yu, MB=8088400600 | en_HK |
dc.identifier.scopusauthorid | Rusli=7409925063 | en_HK |
dc.identifier.scopusauthorid | Yoon, SF=35563567700 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Chew, K=7102902559 | en_HK |
dc.identifier.scopusauthorid | Cui, J=7401811493 | en_HK |
dc.identifier.scopusauthorid | Ahn, J=7403019265 | en_HK |
dc.identifier.scopusauthorid | Zhang, Q=35294175000 | en_HK |
dc.identifier.issnl | 0040-6090 | - |