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Article: Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

TitlePhotoluminescence characterization of beryllium-implanted 6H-silicon carbide
Authors
Chen, XDFung, SBeling, CDHuang, YLi, QXu, SJGong, MHenkel, TTanoue, HKobayashi, N
KeywordsA. Silicon carbide
C. Be implantation
C. Beryllium acceptors
Photoluminescence
Issue Date2002
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 2002, v. 121 n. 2-3, p. 67-71 How to Cite?
DOI: http://dx.doi.org/10.1016/S0038-1098(01)00478-1
AbstractBeryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels. © 2002 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80835
ISSN
0038-1098
2021 Impact Factor: 1.934
2020 SCImago Journal Rankings: 0.429
ISI Accession Number ID
WOS:000173266700002
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2010-09-06T08:10:48Z-
dc.date.available2010-09-06T08:10:48Z-
dc.date.issued2002en_HK
dc.identifier.citationSolid State Communications, 2002, v. 121 n. 2-3, p. 67-71en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80835-
dc.description.abstractBeryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels. © 2002 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.subjectA. Silicon carbideen_HK
dc.subjectC. Be implantationen_HK
dc.subjectC. Beryllium acceptorsen_HK
dc.subjectPhotoluminescenceen_HK
dc.titlePhotoluminescence characterization of beryllium-implanted 6H-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=121&spage=67&epage=71&date=2002&atitle=Photoluminescence+characterization+of+beryllium-implanted+6H-silicon+carbideen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0038-1098(01)00478-1en_HK
dc.identifier.scopuseid_2-s2.0-0037005681en_HK
dc.identifier.hkuros65268en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037005681&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume121en_HK
dc.identifier.issue2-3en_HK
dc.identifier.spage67en_HK
dc.identifier.epage71en_HK
dc.identifier.isiWOS:000173266700002-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK
dc.identifier.issnl0038-1098-

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