File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Random capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric

TitleRandom capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectric
Authors
Liu, YChen, TPNg, CYTse, MSZhao, PFu, YQZhang, SFung, S
Issue Date2005
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2005, v. 16 n. 8, p. 1119-1122 How to Cite?
DOI: http://dx.doi.org/10.1088/0957-4484/16/8/022
AbstractIn this paper, we report a study on time-domain capacitance characterization of metal-oxide-semiconductor (MOS) structures with Si nanocrystals (nc-Si) distributing throughout the gate oxide. A drastic reduction of MOS capacitance can be observed by charge trapping in nc-Si, while release of the charges leads to the recovery of the capacitance. Such capacitance modulation is explained by an equivalent circuit in terms of the change of nc-Si capacitance as a result of charging/discharging. As the capacitance modulation represents a change in the electrical states of MOS structure, it could be used for memory applications. © 2005 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/80907
ISSN
0957-4484
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
WOS:000231410600022
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorZhao, Pen_HK
dc.contributor.authorFu, YQen_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:11:35Z-
dc.date.available2010-09-06T08:11:35Z-
dc.date.issued2005en_HK
dc.identifier.citationNanotechnology, 2005, v. 16 n. 8, p. 1119-1122en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80907-
dc.description.abstractIn this paper, we report a study on time-domain capacitance characterization of metal-oxide-semiconductor (MOS) structures with Si nanocrystals (nc-Si) distributing throughout the gate oxide. A drastic reduction of MOS capacitance can be observed by charge trapping in nc-Si, while release of the charges leads to the recovery of the capacitance. Such capacitance modulation is explained by an equivalent circuit in terms of the change of nc-Si capacitance as a result of charging/discharging. As the capacitance modulation represents a change in the electrical states of MOS structure, it could be used for memory applications. © 2005 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.titleRandom capacitance modulation due to charging/discharging in Si nanocrystals embedded in gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0957-4484&volume=16&spage=1119&epage=1122&date=2005&atitle=Random+capacitance+modulation+due+to+charging/discharging+in+Si+nanocrystals+embedded+in+gate+dielectricen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0957-4484/16/8/022en_HK
dc.identifier.scopuseid_2-s2.0-21144456454en_HK
dc.identifier.hkuros98130en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-21144456454&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1119en_HK
dc.identifier.epage1122en_HK
dc.identifier.isiWOS:000231410600022-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridZhao, P=8521897200en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.citeulike207024-
dc.identifier.issnl0957-4484-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats