Deep level defects in 6H silicon carbide

Abstract

文章作者利用深能級瞬態譜 (DLTS) ,正電子湮滅譜 (PAS)和光致熒光譜 (PL)等譜分析技術研究了六方碳化硅中具有電活性的深能級缺陷 .這些深能級缺陷分別通過不同能量的電子輻照、中子輻照 ,或氦離子注入等產生 .經過研究和分析各種實驗測試的相關圖譜 ,作者給出了六方碳化硅中一些重要的深能級缺陷在可控輻照條件下產生和退火行為的研究結果以及這些深能級缺陷相關結構的實驗依據 . We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photoluminescence. The deep level defects were created by neutron irradiation, He implantation and electron irradiation with different energies. After analysis of the information gained from the different types of spectroscopy, as well as consideration of the defect creation and annealing behavior under different controlled environments, we provide experimental evidence for the microstructure of certain important deep level defects.