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Article: Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

TitleGrowth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Authors
Xie, MHCheung, SHZheng, LXTong, SYZhang, BSYang, H
Issue Date2002
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtml
Citation
International Journal Of Modern Physics B, 2002, v. 16 n. 1-2, p. 165-172 How to Cite?
AbstractInitial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence processes than that of the flat film.
Persistent Identifierhttp://hdl.handle.net/10722/80946
ISSN
0217-9792
2023 Impact Factor: 2.6
2023 SCImago Journal Rankings: 0.298
ISI Accession Number ID
WOS:000173857900024
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorZhang, BSen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2010-09-06T08:12:02Z-
dc.date.available2010-09-06T08:12:02Z-
dc.date.issued2002en_HK
dc.identifier.citationInternational Journal Of Modern Physics B, 2002, v. 16 n. 1-2, p. 165-172en_HK
dc.identifier.issn0217-9792en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80946-
dc.description.abstractInitial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence processes than that of the flat film.en_HK
dc.languageengen_HK
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtmlen_HK
dc.relation.ispartofInternational Journal of Modern Physics Ben_HK
dc.titleGrowth and structural properties of GaN films on flat and vicinal SiC(0001) substratesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0217-9792&volume=16&spage=165&epage=172&date=2002&atitle=Growth+and+structural+properties+of+GaN+films+on+flat+and+vicinal+SiC(0001)+substratesen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0037138111en_HK
dc.identifier.hkuros65632en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037138111&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume16en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage165en_HK
dc.identifier.epage172en_HK
dc.identifier.isiWOS:000173857900024-
dc.publisher.placeSingaporeen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridZhang, BS=16204605300en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.issnl0217-9792-

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