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Article: Investigation of residual donor defects in undoped and Fe-doped LEC InP
Title | Investigation of residual donor defects in undoped and Fe-doped LEC InP |
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Authors | |
Keywords | Donor defect Indium phosphide Semi-insulating |
Issue Date | 2002 |
Publisher | London Corn Circular. |
Citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 5, p. 455-458 How to Cite? |
Abstract | The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe2+ concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP. |
Persistent Identifier | http://hdl.handle.net/10722/80984 |
ISSN | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhao, Y | en_HK |
dc.contributor.author | Sun, N | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Sun, T | en_HK |
dc.contributor.author | Lin, L | en_HK |
dc.date.accessioned | 2010-09-06T08:12:27Z | - |
dc.date.available | 2010-09-06T08:12:27Z | - |
dc.date.issued | 2002 | en_HK |
dc.identifier.citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2002, v. 23 n. 5, p. 455-458 | en_HK |
dc.identifier.issn | 0253-4177 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80984 | - |
dc.description.abstract | The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Hall effect is much higher than the concentration of net donor impurity determined by glow discharge mass spectroscopy. Evidence of the existence of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-doped InP materials can be observed with infrared absorption spectra. The concentration increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe2+ concentration in Fe-doped semi-insulating (SI) InP. These results indicate that the hydrogen-indium vacancy complex is an important donor defect in as-grown LEC InP, and that it has significant influence on the compensation in Fe-doped SI InP. | en_HK |
dc.language | eng | en_HK |
dc.publisher | London Corn Circular. | en_HK |
dc.relation.ispartof | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | en_HK |
dc.subject | Donor defect | en_HK |
dc.subject | Indium phosphide | en_HK |
dc.subject | Semi-insulating | en_HK |
dc.title | Investigation of residual donor defects in undoped and Fe-doped LEC InP | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0899-9988&volume=23&spage=455&epage=458&date=2002&atitle=Investigation+of+residual+donor+defects+in+undoped+and+Fe-doped+LEC+InP | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-0036587668 | en_HK |
dc.identifier.hkuros | 72641 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0036587668&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 23 | en_HK |
dc.identifier.issue | 5 | en_HK |
dc.identifier.spage | 455 | en_HK |
dc.identifier.epage | 458 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Zhao, Y=7406633326 | en_HK |
dc.identifier.scopusauthorid | Sun, N=7202556986 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Sun, T=7402922751 | en_HK |
dc.identifier.scopusauthorid | Lin, L=7404131111 | en_HK |
dc.identifier.issnl | 0253-4177 | - |