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Article: The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
Title | The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence |
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Authors | |
Keywords | Electron Diffraction Heterojunctions Nucleation Semiconducting Aluminum Compounds Transmission Electron Microscopy |
Issue Date | 2007 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2007, v. 91 n. 20, article no. 203115 How to Cite? |
Abstract | Lateral-polarity heterostructures of GaN on c sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga polar while those grown on the nitrided sapphire were N polar, as confirmed by convergent-beam electron diffraction and Z -contrast images. We directly determined the atomic interface structure between the AlN and c sapphire with an aberration-corrected scanning transmission electron microscope at ∼1.0 Å resolution. This is the direct experimental evidence for the origin of the polarity control in III nitrides. This understanding is an important step toward manipulating polarity in these semiconductors. © 2007 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/91401 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, F | en_HK |
dc.contributor.author | Collazo, R | en_HK |
dc.contributor.author | Mita, S | en_HK |
dc.contributor.author | Sitar, Z | en_HK |
dc.contributor.author | Duscher, G | en_HK |
dc.contributor.author | Pennycook, SJ | en_HK |
dc.date.accessioned | 2010-09-17T10:18:41Z | - |
dc.date.available | 2010-09-17T10:18:41Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2007, v. 91 n. 20, article no. 203115 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/91401 | - |
dc.description.abstract | Lateral-polarity heterostructures of GaN on c sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga polar while those grown on the nitrided sapphire were N polar, as confirmed by convergent-beam electron diffraction and Z -contrast images. We directly determined the atomic interface structure between the AlN and c sapphire with an aberration-corrected scanning transmission electron microscope at ∼1.0 Å resolution. This is the direct experimental evidence for the origin of the polarity control in III nitrides. This understanding is an important step toward manipulating polarity in these semiconductors. © 2007 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.subject | Electron Diffraction | en_HK |
dc.subject | Heterojunctions | en_HK |
dc.subject | Nucleation | en_HK |
dc.subject | Semiconducting Aluminum Compounds | en_HK |
dc.subject | Transmission Electron Microscopy | en_HK |
dc.title | The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Liu, F:fordliu@hku.hk | en_HK |
dc.identifier.authority | Liu, F=rp01358 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.2815748 | en_HK |
dc.identifier.scopus | eid_2-s2.0-36248981988 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-36248981988&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 91 | en_HK |
dc.identifier.issue | 20 | en_HK |
dc.identifier.spage | article no. 203115 | - |
dc.identifier.epage | article no. 203115 | - |
dc.identifier.eissn | 1077-3118 | - |
dc.identifier.isi | WOS:000251003500099 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Liu, F=11038795100 | en_HK |
dc.identifier.scopusauthorid | Collazo, R=6701729383 | en_HK |
dc.identifier.scopusauthorid | Mita, S=8535369100 | en_HK |
dc.identifier.scopusauthorid | Sitar, Z=7004338257 | en_HK |
dc.identifier.scopusauthorid | Duscher, G=7006023463 | en_HK |
dc.identifier.scopusauthorid | Pennycook, SJ=36039748000 | en_HK |
dc.identifier.issnl | 0003-6951 | - |