Showing results 1 to 6 of 6
Title | Author(s) | Issue Date | Views | |
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Deep energy levels in RuO2/4H–SiC Schottky barrier structures Journal:Applied Physics Letters | 2006 | 198 | ||
Oriented lateral growth of two-dimensional materials on c-plane sapphire Journal:Nature Nanotechnology | 20-Jul-2023 | |||
Pinning-Free Edge Contact Monolayer MoS2 FET Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 29 | ||
Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | |||
Switchable NAND and NOR Logic Computing in Single Triple-Gate Monolayer MoS2 n-FET Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 | 21 | ||
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