Showing results 2 to 4 of 4
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Title | Author(s) | Issue Date | Views | |
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High performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application Proceeding/Conference:2011 Symposium on VLSI Technology - Digest of Technical Papers | 2011 | 8 | ||
Highly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping Journal:IEEE Transactions on Electron Devices | 2012 | 12 | ||
Self-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2011 | 17 |