Browsing by Author Chan, CL

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TitleAuthor(s)Issue DateViews
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
196
 
2010
214
 
2008
203
 
2008
198
 
2006
190
 
2009
193
 
2003
181
 
2000
167
 
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO
Journal:Applied Physics A: Materials Science and Processing
2005
144
 
2000
186
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
1999
114
 
2001
167
Interface properties of N2O-annealed SiO2/SiC system
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
2000
116
 
2004
198
 
2005
186
 
2006
179
 
2021
14
 
2022
6
 
2004
68
 
2001
147