Showing results 4 to 7 of 7
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Title | Author(s) | Issue Date | |
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In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics) | 2005 | ||
InN Island shape and its dependence on growth condition of molecular-beam epitaxy Journal:Applied Physics Letters | 2003 | ||
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter) | 2003 | ||
A study of Inx Ga1-x N growth by reflection high-energy electron diffraction Journal:Journal of Applied Physics | 2005 |