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	Title	Author(s)	Issue Date	Views
	Gate leakage properties of MOS devices with tri-layer high-k gate dielectric Journal:Microelectronics Reliability	Chen, WB Xu, JP Lai, PT Li, YP Xu, SG	2007	223
	Gate leakage properties of MOS devices with TriLayer high-k gate dielectric Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Chen, WB Xu, JP Lai, PT Li, YP Xu, SG	2006	180
	Improved efficiency of organic photovoltaic MEH-PPV/PCBM device with CuPc-doping Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Chen, WB Deng, MZ Zou, HJ Li, CY Deng, LF Lai, PT	2010	120
	Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Deng, LF Lai, PT Tao, QB Choi, HW Xu, JP Chen, WB Che, CM Liu, YR	2010	111
	Improved performance of pentacene OTFT with HfLaO gate dielectric by annealing in NH 3 Proceeding/Conference:ECS Transactions	Deng, LF Lai, PT Xu, JP Choi, HW Chen, WB Che, CM	2010	108
	Improving efficiency of organic photovoltaic cells with pentacene-doped CuPc layer Journal:Applied Physics Letters	Chen, WB Xiang, HF Xu, ZX Yan, BP Roy, VAL Che, CM Lai, PT	2007	189
	Improving the performance of polymer solar cells by adjusting the crystallinity and nanoscale phase separation Journal:Chinese Physics B	Chen, WB Xu, ZX Li, K Chui, SSY Roy, VAL Lai, PT Che, CM	2012	45
	One-Dimensional Consolidation of Multilayered Soil with Continuous Drainage Boundaries and Under Time-Dependent Loading Journal:International Journal of Geomechanics	CHEN, X Chen, WB Yue, QZQ	2022
	Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006	Lai, PT Xu, JP Li, CX Zou, X Chen, WB	2007	132
	Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Zou, X Li, CX Xu, JP Lai, PT Chen, WB	2006	111
	A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability	Zou, X Xu, JP Li, CX Lai, PT Chen, WB	2007	205

Showing results 10 to 20 of 20 < previous