Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
245-GHz InAlN/GaN HEMTs with oxygen plasma treatment Journal:IEEE Electron Device Letters | 2011 | |||
Al<inf>2</inf>O<inf>3</inf> passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance Journal:Physica Status Solidi (C) Current Topics in Solid State Physics | 2010 | |||
High performance InAlN/GaN HEMTs on sic substrate Proceeding/Conference:2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 | 2010 |