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Article: Electroresistance and field effects in epitaxial thin films of Pr0.7Sr0.3MnO3
| Title | Electroresistance and field effects in epitaxial thin films of Pr0.7Sr0.3MnO3 | ||||
|---|---|---|---|---|---|
| Authors | |||||
| Keywords | Carrier spins Electroresistance Epitaxial thin films Field effects Field modulation | ||||
| Issue Date | 2010 | ||||
| Publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | ||||
| Citation | Applied Physics A: Materials Science & Processing, 2010, v. 101 n. 4, p. 661-664 How to Cite? | ||||
| Abstract | Highly epitaxial thin films of Pr0.7Sr0.3MnO 3 were grown on (100) SrTiO3 single crystal substrates by laser ablation. Similar to other manganite compounds, these Pr 0.7Sr0.3MnO3 films exhibited remarkable magnetoresistance. Application of electric currents could induce a remarkable reduction in resistivity, demonstrating a strong electroresistance effect. The ratio of the resistance variation, ER=[R(0)-R(I)]/R(I), is about 33% at metal-insulator transition temperature. Using a planar field effect configuration, significant field modulation of the metal-insulator transition was achieved. The observed field effects were discussed based on the strong interactions between carrier spins and localized spins in Mn ions, as well as the percolative mechanism of phase separation. © 2010 The Author(s). | ||||
| Persistent Identifier | http://hdl.handle.net/10722/133820 | ||||
| ISSN | 2021 Impact Factor: 2.983 2020 SCImago Journal Rankings: 0.485 | ||||
| ISI Accession Number ID |
Funding Information: This work has been supported by a grant of the Research Grant Council of Hong Kong (Project No. HKU 7024/07P). |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gao, J | en_US |
| dc.contributor.author | Liu, HY | en_US |
| dc.date.accessioned | 2011-05-31T07:23:13Z | - |
| dc.date.available | 2011-05-31T07:23:13Z | - |
| dc.date.issued | 2010 | en_US |
| dc.identifier.citation | Applied Physics A: Materials Science & Processing, 2010, v. 101 n. 4, p. 661-664 | - |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/133820 | - |
| dc.description.abstract | Highly epitaxial thin films of Pr0.7Sr0.3MnO 3 were grown on (100) SrTiO3 single crystal substrates by laser ablation. Similar to other manganite compounds, these Pr 0.7Sr0.3MnO3 films exhibited remarkable magnetoresistance. Application of electric currents could induce a remarkable reduction in resistivity, demonstrating a strong electroresistance effect. The ratio of the resistance variation, ER=[R(0)-R(I)]/R(I), is about 33% at metal-insulator transition temperature. Using a planar field effect configuration, significant field modulation of the metal-insulator transition was achieved. The observed field effects were discussed based on the strong interactions between carrier spins and localized spins in Mn ions, as well as the percolative mechanism of phase separation. © 2010 The Author(s). | en_US |
| dc.language | eng | en_US |
| dc.publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | en_US |
| dc.relation.ispartof | Applied Physics A: Materials Science & Processing | en_US |
| dc.rights | The original publication is available at www.springerlink.com | en_US |
| dc.subject | Carrier spins | - |
| dc.subject | Electroresistance | - |
| dc.subject | Epitaxial thin films | - |
| dc.subject | Field effects | - |
| dc.subject | Field modulation | - |
| dc.title | Electroresistance and field effects in epitaxial thin films of Pr0.7Sr0.3MnO3 | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Gao, J: jugao@hku.hk | - |
| dc.identifier.email | Liu, HY: liuheyan@hku.hk | - |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.1007/s00339-010-5920-9 | en_US |
| dc.identifier.scopus | eid_2-s2.0-78650591902 | - |
| dc.identifier.hkuros | 196814 | - |
| dc.identifier.volume | 101 | en_US |
| dc.identifier.issue | 4 | en_US |
| dc.identifier.spage | 661 | en_US |
| dc.identifier.epage | 664 | en_US |
| dc.identifier.isi | WOS:000285195300015 | - |
| dc.publisher.place | Germany | - |
| dc.description.other | Springer Open Choice, 31 May 2011 | en_US |
| dc.identifier.issnl | 0947-8396 | - |