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Conference Paper: Naturally soft-switched high-frequency gate drive circuit for power MOSFETs/IGBTs

TitleNaturally soft-switched high-frequency gate drive circuit for power MOSFETs/IGBTs
Authors
Tang, SCHui, SYRChung, H
KeywordsBipolar Transistors
Electric Transformers
Modulation
Mosfet Devices
Power Integrated Circuits
Printed Circuit Boards
Switching Networks
Issue Date1999
Citation
Proceedings Of The International Conference On Power Electronics And Drive Systems, 1999, v. 1, p. 246-252 How to Cite?
AbstractAn isolated soft-switched gate drive using a coreless PCB transformer is described. The switching frequency of the gate drive electronics is set at 8 MHz and the diameter of the coreless PCB transformer is merely 0.46cm. Because of the high frequency operation involved, the gate drive electronics has to be soft-switched in order to achieve high energy efficiency and reduce the gate drive power consumption. With the use of a modulation technique, the gate drive circuit can operate a power MOSFET and a power IGBT over a wide frequency range from 0.1Hz to at least 500kHz. The power consumption of the gate drive is kept below 1W throughout the switching frequency range.
Persistent Identifierhttp://hdl.handle.net/10722/136846

 

DC FieldValueLanguage
dc.contributor.authorTang, SCen_HK
dc.contributor.authorHui, SYRen_HK
dc.contributor.authorChung, Hen_HK
dc.date.accessioned2011-07-29T02:13:06Z-
dc.date.available2011-07-29T02:13:06Z-
dc.date.issued1999en_HK
dc.identifier.citationProceedings Of The International Conference On Power Electronics And Drive Systems, 1999, v. 1, p. 246-252en_HK
dc.identifier.urihttp://hdl.handle.net/10722/136846-
dc.description.abstractAn isolated soft-switched gate drive using a coreless PCB transformer is described. The switching frequency of the gate drive electronics is set at 8 MHz and the diameter of the coreless PCB transformer is merely 0.46cm. Because of the high frequency operation involved, the gate drive electronics has to be soft-switched in order to achieve high energy efficiency and reduce the gate drive power consumption. With the use of a modulation technique, the gate drive circuit can operate a power MOSFET and a power IGBT over a wide frequency range from 0.1Hz to at least 500kHz. The power consumption of the gate drive is kept below 1W throughout the switching frequency range.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of the International Conference on Power Electronics and Drive Systemsen_HK
dc.subjectBipolar Transistorsen_US
dc.subjectElectric Transformersen_US
dc.subjectModulationen_US
dc.subjectMosfet Devicesen_US
dc.subjectPower Integrated Circuitsen_US
dc.subjectPrinted Circuit Boardsen_US
dc.subjectSwitching Networksen_US
dc.titleNaturally soft-switched high-frequency gate drive circuit for power MOSFETs/IGBTsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailHui, SYR:ronhui@eee.hku.hken_HK
dc.identifier.authorityHui, SYR=rp01510en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033326433en_HK
dc.identifier.volume1en_HK
dc.identifier.spage246en_HK
dc.identifier.epage252en_HK
dc.identifier.scopusauthoridTang, SC=24340444700en_HK
dc.identifier.scopusauthoridHui, SYR=7202831744en_HK
dc.identifier.scopusauthoridChung, H=7404007467en_HK

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