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- Publisher Website: 10.1016/j.sse.2011.02.007
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Article: Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Title | Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers | ||||||
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Authors | |||||||
Keywords | GaN Low-frequency noise MQWs Nano-ELO Thermoreflectance | ||||||
Issue Date | 2011 | ||||||
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | ||||||
Citation | Solid-State Electronics, 2011, v. 62 n. 1, p. 94-98 How to Cite? | ||||||
Abstract | We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers. This layer was deposited using a SiO 2 growth mask with nanometer-scale windows. The active regions of the devices consist of five-period GaN/InGaN MQWs. Structural analyses of the material indicate significant reduction in the threading dislocation density of the devices compared to the control which were fabricated without the use of the NELO GaN layers. The hot-electron degradation of the devices due to the application of a large dc. current was characterized by detailed examination of the electroluminescence (EL), I-V, thermoreflectance and the current noise power spectra of the devices as a function of the stress time. Significant improvements in the hot-electron hardness were observed in the device compared to the control. © 2011 Elsevier Ltd. All rights reserved. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/141688 | ||||||
ISSN | 2023 Impact Factor: 1.4 2023 SCImago Journal Rankings: 0.348 | ||||||
ISI Accession Number ID |
Funding Information: This work is supported in part by an RGC Grant (PolyU 5302/09E). Further support is provided by a Niche area grant of the Hong Kong Polytechnic University. | ||||||
References |
DC Field | Value | Language |
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dc.contributor.author | Zhang, ZW | en_HK |
dc.contributor.author | Zhu, CF | en_HK |
dc.contributor.author | Fong, WK | en_HK |
dc.contributor.author | Leung, KK | en_HK |
dc.contributor.author | Chan, PKL | en_HK |
dc.contributor.author | Surya, C | en_HK |
dc.date.accessioned | 2011-09-27T02:58:10Z | - |
dc.date.available | 2011-09-27T02:58:10Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | Solid-State Electronics, 2011, v. 62 n. 1, p. 94-98 | en_HK |
dc.identifier.issn | 0038-1101 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/141688 | - |
dc.description.abstract | We report investigations on the hot-electron hardness of GaN-based multiple quantum wells (MQWs) fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers. This layer was deposited using a SiO 2 growth mask with nanometer-scale windows. The active regions of the devices consist of five-period GaN/InGaN MQWs. Structural analyses of the material indicate significant reduction in the threading dislocation density of the devices compared to the control which were fabricated without the use of the NELO GaN layers. The hot-electron degradation of the devices due to the application of a large dc. current was characterized by detailed examination of the electroluminescence (EL), I-V, thermoreflectance and the current noise power spectra of the devices as a function of the stress time. Significant improvements in the hot-electron hardness were observed in the device compared to the control. © 2011 Elsevier Ltd. All rights reserved. | en_HK |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | en_HK |
dc.relation.ispartof | Solid-State Electronics | en_HK |
dc.subject | GaN | en_HK |
dc.subject | Low-frequency noise | en_HK |
dc.subject | MQWs | en_HK |
dc.subject | Nano-ELO | en_HK |
dc.subject | Thermoreflectance | en_HK |
dc.title | Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Chan, PKL:pklc@hku.hk | en_HK |
dc.identifier.authority | Chan, PKL=rp01532 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/j.sse.2011.02.007 | en_HK |
dc.identifier.scopus | eid_2-s2.0-79957939652 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-79957939652&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 62 | en_HK |
dc.identifier.issue | 1 | en_HK |
dc.identifier.spage | 94 | en_HK |
dc.identifier.epage | 98 | en_HK |
dc.identifier.isi | WOS:000292444000016 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Zhang, ZW=40662214700 | en_HK |
dc.identifier.scopusauthorid | Zhu, CF=16200484400 | en_HK |
dc.identifier.scopusauthorid | Fong, WK=7102815889 | en_HK |
dc.identifier.scopusauthorid | Leung, KK=7401860414 | en_HK |
dc.identifier.scopusauthorid | Chan, PKL=35742829700 | en_HK |
dc.identifier.scopusauthorid | Surya, C=7003939256 | en_HK |
dc.identifier.issnl | 0038-1101 | - |