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- Publisher Website: 10.1109/ICSENS.2007.4388392
- Scopus: eid_2-s2.0-48349102869
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Conference Paper: Electrostatically driven touch-mode poly-SiC micro speaker
Title | Electrostatically driven touch-mode poly-SiC micro speaker |
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Authors | |
Issue Date | 2007 |
Citation | Proceedings Of Ieee Sensors, 2007, p. 284-287 How to Cite? |
Abstract | This paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex down into contact with the back-plate when exposed to atmospheric pressure. Sound Pressure Level (SPL) measurements were recorded for a device with a poly-SiC membrane thickness of 1μm, a diameter of 800μm, and a diaphragm/back-plate spacing of 8μm. At a distance of 10mm, a maximum SPL of 73 dB was found at a frequency of 16.59 kHz. © 2007 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/149023 |
References |
DC Field | Value | Language |
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dc.contributor.author | Roberts, RC | en_HK |
dc.contributor.author | Du, J | en_HK |
dc.contributor.author | Ong, AK | en_HK |
dc.contributor.author | Li, D | en_HK |
dc.contributor.author | Zorman, CA | en_HK |
dc.contributor.author | Tien, NC | en_HK |
dc.date.accessioned | 2012-06-20T06:17:56Z | - |
dc.date.available | 2012-06-20T06:17:56Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Proceedings Of Ieee Sensors, 2007, p. 284-287 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/149023 | - |
dc.description.abstract | This paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex down into contact with the back-plate when exposed to atmospheric pressure. Sound Pressure Level (SPL) measurements were recorded for a device with a poly-SiC membrane thickness of 1μm, a diameter of 800μm, and a diaphragm/back-plate spacing of 8μm. At a distance of 10mm, a maximum SPL of 73 dB was found at a frequency of 16.59 kHz. © 2007 IEEE. | en_HK |
dc.language | eng | en_US |
dc.relation.ispartof | Proceedings of IEEE Sensors | en_HK |
dc.title | Electrostatically driven touch-mode poly-SiC micro speaker | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Roberts, RC: rcr8@hku.hk | en_HK |
dc.identifier.email | Tien, NC: nctien@hku.hk | en_HK |
dc.identifier.authority | Roberts, RC=rp01738 | en_HK |
dc.identifier.authority | Tien, NC=rp01604 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1109/ICSENS.2007.4388392 | en_HK |
dc.identifier.scopus | eid_2-s2.0-48349102869 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-48349102869&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.spage | 284 | en_HK |
dc.identifier.epage | 287 | en_HK |
dc.identifier.scopusauthorid | Roberts, RC=24466830100 | en_HK |
dc.identifier.scopusauthorid | Du, J=7402575307 | en_HK |
dc.identifier.scopusauthorid | Ong, AK=15770223700 | en_HK |
dc.identifier.scopusauthorid | Li, D=24484642700 | en_HK |
dc.identifier.scopusauthorid | Zorman, CA=7005077073 | en_HK |
dc.identifier.scopusauthorid | Tien, NC=7006532826 | en_HK |