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Conference Paper: Confinement profile of as-grown MOVPE AlGaAs/GaAs quantum well structures

TitleConfinement profile of as-grown MOVPE AlGaAs/GaAs quantum well structures
Authors
Choy, WCHHughes, PJWeiss, BL
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 1997, v. 450, p. 425-430 How to Cite?
AbstractInterband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.
Persistent Identifierhttp://hdl.handle.net/10722/158198
ISSN
0272-9172
2019 SCImago Journal Rankings: 0.114

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_US
dc.contributor.authorHughes, PJen_US
dc.contributor.authorWeiss, BLen_US
dc.date.accessioned2012-08-08T08:58:30Z-
dc.date.available2012-08-08T08:58:30Z-
dc.date.issued1997en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 1997, v. 450, p. 425-430en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/158198-
dc.description.abstractInterband transitions of a series of as-grown AlGaAs/GaAs quantum well structures grown by MOVPE have been studied using photoreflectance to determine their well shape. The transition energies calculated using three different quantum well profiles are compared to those obtained using photoreflectance. The results show that the shape of these structures is best represented by an exponential potential profile.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleConfinement profile of as-grown MOVPE AlGaAs/GaAs quantum well structuresen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030643279en_US
dc.identifier.volume450en_US
dc.identifier.spage425en_US
dc.identifier.epage430en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, WCH=7006202371en_US
dc.identifier.scopusauthoridHughes, PJ=36347155300en_US
dc.identifier.scopusauthoridWeiss, BL=7402309717en_US
dc.identifier.issnl0272-9172-

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