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Conference Paper: Optimization of silicon Spreading-Resistance Temperature sensor

TitleOptimization of silicon Spreading-Resistance Temperature sensor
Authors
Li, BinLai, PTChan, CLSin, JKO
Issue Date2000
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 20-23 How to Cite?
AbstractThe resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n+ region and high substrate doping, the SRT sensor can function at temperatures up to 400 °C at a low current of 2 mA.
Persistent Identifierhttp://hdl.handle.net/10722/158295

 

DC FieldValueLanguage
dc.contributor.authorLi, Binen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChan, CLen_US
dc.contributor.authorSin, JKOen_US
dc.date.accessioned2012-08-08T08:58:57Z-
dc.date.available2012-08-08T08:58:57Z-
dc.date.issued2000en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 20-23en_US
dc.identifier.urihttp://hdl.handle.net/10722/158295-
dc.description.abstractThe resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n+ region and high substrate doping, the SRT sensor can function at temperatures up to 400 °C at a low current of 2 mA.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleOptimization of silicon Spreading-Resistance Temperature sensoren_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034476055en_US
dc.identifier.spage20en_US
dc.identifier.epage23en_US
dc.identifier.scopusauthoridLi, Bin=26643217800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChan, CL=8507083700en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US

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