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- Publisher Website: 10.1109/EDSSC.2005.1635254
- Scopus: eid_2-s2.0-43549116550
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Conference Paper: A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects
Title | A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects |
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Authors | |
Issue Date | 2006 |
Citation | 2005 IEEE Conference On Electron Devices And Solid-State Circuits, EDSSC, 2006, p. 253-256 How to Cite? |
Abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/158515 |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, JP | en_US |
dc.contributor.author | Li, YP | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.contributor.author | Chen, WB | en_US |
dc.contributor.author | Xu, SG | en_US |
dc.date.accessioned | 2012-08-08T09:00:02Z | - |
dc.date.available | 2012-08-08T09:00:02Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.citation | 2005 IEEE Conference On Electron Devices And Solid-State Circuits, EDSSC, 2006, p. 253-256 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/158515 | - |
dc.description.abstract | A threshold condition different from the classical one is proposed for MOSFET with quantum effects. Furthermore, an accurate 1-D threshold-voltage model including polysilicon-depletion effects and a 2-D quantum-modified threshold-voltage model for small MOSFET are built. The simulated results exhibit good agreement with measurement data. © 2005 IEEE. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | en_US |
dc.title | A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1109/EDSSC.2005.1635254 | en_US |
dc.identifier.scopus | eid_2-s2.0-43549116550 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-43549116550&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.spage | 253 | en_US |
dc.identifier.epage | 256 | en_US |
dc.identifier.scopusauthorid | Xu, JP=35754128700 | en_US |
dc.identifier.scopusauthorid | Li, YP=47661368400 | en_US |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_US |
dc.identifier.scopusauthorid | Chen, WB=51563508300 | en_US |
dc.identifier.scopusauthorid | Xu, SG=14055300000 | en_US |